Abstract:Two-dimensional transition metal dichalcogenides are appealing materials for the preparation of nanoelectronic devices, and the development of memristors for information storage and neuromorphic computing using such materials is of particular interest. However, memristor arrays based on two-dimensional transition metal dichalcogenides are rarely reported due to low yield and high device-to-device variability. Herein, the 2D MoTe2 film was prepared by the chemical vapor deposition method. Then the memristive devices based on 2D MoTe2 film were fabricated through the polymethyl methacrylate transfer method and the lift-off process. The as-prepared MoTe2 devices perform stable bipolar resistive switching, including superior retention characteristics (>500 s), fast switching (similar to 60 ns for SET and similar to 280 ns for RESET), and excellent endurance (>2000 cycles). More importantly, the MoTe2 devices exhibit high yield (96%), low cycle-to-cycle variability (6.6% for SET and 5.2% for RESET), and low device-to-device variability (19.9% for SET and 15.6% for RESET). In addition, a 3x3 memristor array with 1R scheme is successfully demonstrated based on 2D MoTe2 film. And, high recognition accuracy (91.3%) is realized by simulation in the artificial neural network with the MoTe2 devices working as synapses. It is found that the formation/rupture of metallic filaments is the dominating switching mechanism based on the investigations of the electron transport characteristics of high and low resistance states in the present MoTe2 devices. This work demonstrates that large-scale two-dimensional transition metal dichalcogenides film is of great potential for future applications in neuromorphic computing.

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