Abstract:As the most basic interconnection metallic material, copper (Cu) has been widely used in giant-large scale integrated circuits (GLSI). Corrosion inhibitors always play a crucial role in the Cu chemical mechanical polishing (CMP) process. The passivation of hydrogen peroxide (H2O2) alone is too weak to adequately protect against chemical corrosion on the surface of Cu film, thus, it is necessary to add corrosion inhibitors to the slurry. As a representative corrosion inhibitor, 1, 2, 4-triazole was compared with a novel corrosion inhibitor known as TT-LYK (ethanol, 2, 2′-[[(methyl-1H-benzotriazol-1-yl) methyl] imino] bis-), and their mixed inhibitor was studied in this paper. Different analytical methods such as the potentiodynamic polarization test, physical appearance phenomenon analysis, contact angle measurement and dynamic polishing experiment were used to compare their inhibition properties, and the fitting of different adsorption isotherms and static erosion tests were used to clarify the adsorption types and passivation processes respectively. The results indicated that both TT-LYK and 1, 2, 4-triazole achieved the goal of inhibiting Cu surface corrosion, but the inhibition effect of TT-LYK was slightly weaker at the same mass fraction. The corrosion protection of the two inhibitors is mainly attributable to the presence of organic inhibitor molecules on the surface of Cu by chemisorption and physisorption simultaneously. The passivation processes of both can be divided into two steps. First, the direct growth of the Cu-inhibitor passivation film occurs, followed by the redeposition of the Cu-inhibitor complex. From the results of electrochemical experiments, it can be concluded that the structure of the thin passivation film growing on the Cu surface varies with the inhibitor, and the composition of the passivation film was investigated by XPS and Raman spectrum analysis. At the same time, the surface roughness after polishing was found to decrease with the increase in inhibition effect of the inhibitors. According to the inhibition characteristics of these two inhibitors, a mixed corrosion inhibitor (TT-LYK and 1, 2, 4-triazole) was proposed in this study. Under the synergistic inhibition action, better inhibition effect and surface quality for Cu CMP were obtained. This outcome may be ascribed to the variation in the structure and density of the passivation film.

First Principle Study of the Adsorption Behavior of 1,2,4-Triazole on Defective Copper Surface

Mechanism of 1,2,4-Triazole During Copper Chemical Mechanical Planarization

DFT study on the adsorption of deprotonated benzotriazole on the defective copper surfaces

Corrosion inhibition threshold effect of 1,2,4-triazole in alkaline chemical mechanical polishing of copper: Investigations using synchrotron radiation microinfrared

Experimental and computational studies on TAD as an additive of copper chemical mechanical polishing

Passivation Kinetics of 1,2,4-Triazole in Copper Chemical Mechanical Polishing

1,2,4-Triazole as a corrosion inhibitor in copper chemical mechanical polishing

Inhibition Mechanism of Benzotriazole in Copper Chemical Mechanical Planarization

Study on the film forming mechanism, corrosion inhibition effect and synergistic action of two different inhibitors on copper surface chemical mechanical polishing for GLSI

Adsorption Mechanism of Benzotriazole on Copper Surface in CMP Based Slurries Containing Peroxide and Glycine

Density Functional Theory Calculations of Tetracene on Low Index Surfaces of Copper Crystal

An Efficient and High Quality Chemical Mechanical Polishing Method for Copper Surface in 3D TSV Integration

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Surface-initiated atom transfer radical polymerization of triazole monomer from copper surface and its anticorrosion performance

Molecular-level investigation of the adsorption mechanisms of thiazolidinediones on Cu 2 O(111) surface: a first-principles DFT study

Polyacrylic Acid as a Lubricant and a Complement to 1,2,4-Triazole for Copper Chemical Mechanical Polishing

Chemical processes in the chemical mechanical polishing of copper

In-situ preparation of triazole polymerization films on copper surface via SI-ATRP method and their performance against copper corrosion

Investigation on the Mechanisms of Corrosion Inhibitor 5-aminotetrazole Used in the Copper Chemical Mechanical Polishing

Tetrazole Derived Levelers for Filling Electroplated Cu Microvias: Electrochemical Behaviors and Quantum Calculations

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry