Abstract:Subsurface damage (SSD) produced in a grinding process will affect the performance and operational duration of single-crystal silicon. In order to reduce the subsurface damage depth generated during the grinding process by adjusting the process parameters (added), experiments were designed to investigate the influence of machining factors on SSD. This included crystal orientation, diamond grit size in the grinding wheel, peripheral speed of the grinding wheel, and feeding with the intention to optimize the parameters affecting SSD. Compared with isotropic materials such as glass, we considered the impact of grinding along different crystal directions and on subsurface damage depth (added). The Magnetorheological Finishing (MRF) spot technique was used to detect the depth of SSD. The results showed that the depth of SSD in silicon increased with the size of diamond grit. SSD can be reduced by either increasing the peripheral speed of the grinding wheel or decreasing the feeding rate of the grinding wheel in the crystal orientation, if the same size of diamond grit was employed. In addition, we proposed a modified model around surface roughness and subsurface crack depth, which considered plastic and brittle deformation mechanisms and material properties of different crystal orientations. When the surface roughness (R-Z) exceeded the brittle-plastic transition's critical value R-ZC (R-ZC > 1.5 mu m, R-ZC > 0.8 mu m), cracks appeared on the subsurface. The experimental results were consistent with the predicted model, which could be used to predict the subsurface cracks by measuring the surface roughness. However, the model only gives the approximate range of subsurface defects, such as dislocations. The morphology and precise depth of plastic deformation subsurface defects, such as dislocations generated in the fine grinding stage, needed to be inspected by transmission electron microscopy (TEM), which were further studied.

The Influence of Cracks in the Coupling Region of Micro-Grinding and Laser Stealth Combined Dicing on the Quality of Cutting Side Walls

Research on the formation and evolution mechanism of cracks in laser stealth dicing of silicon carbide crystals

Investigation on the Processing Quality of Nanosecond Laser Stealth Dicing for 4H-SiC Wafer

Influence of diamond abrasives on material removal of single crystal SiC in mechanical dicing

The evaluation of chipping on single-crystal silicon carbide (SiC) dicing machining using sintered diamond blades

Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining

Numerical Investigation on the Influence of Cutting-Edge Radius and Grinding Wheel Speed on Chip Formation in SiC Grinding

Experimental Analysis of Ductile Cutting Regime in Face Milling of Sintered Silicon Carbide

Formation of Subsurface Cracks in Silicon Wafers by Grinding

Study on micro-grinding mechanism and surface quality of hardened 20 vol% SiCp/Al composites

Optimizing the dicing saw parameters of 60 μm wafer dicing street

Simulation and experimental investigation on the cutting mechanism and surface generation in machining SiCp/Al MMCs

Investigation on the crack fracture mode and edge quality in laser dicing of glass-anisotropic silicon double-layer wafer

Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques

The Influence of Crystal Orientation on Subsurface Damage of Mono-Crystalline Silicon by Bound-Abrasive Grinding

Mechanism analysis and process optimization of nanogrinding single-crystal SiC

Molecular Simulation of the Plastic Deformation and Crack Formation in Single Grit Grinding of 4H-Sic Single Crystal

Study of Prefabricated Crack Propagation on Monocrystalline Silicon Surfaces for Grinding Damage Analysis

Study on the Surface and Subsurface Integrity of Ground Monocrystalline Silicon Wafers

Effects of Stealth Dicing Parameters on Singulation Defects and Die Strength