Abstract:Van der Waals (vdW) heterostructures are an emergent class of metamaterials comprised of vertically stacked two-dimensional (2D) building blocks, which provide us with a vast tool set to engineer their properties on top of the already rich tunability of 2D materials. One of the knobs, the twist angle between different layers, plays a crucial role in the ultimate electronic properties of a vdW heterostructure and does not have a direct analog in other systems such as MBE-grown semiconductor heterostructures. For small twist angles, the moiré pattern produced by the lattice misorientation creates a long-range modulation. So far, the study of the effect of twist angles in vdW heterostructures has been mostly concentrated in graphene/hexagonal boron nitride (h-BN) twisted structures, which exhibit relatively weak interlayer interaction due to the presence of a large bandgap in h-BN. Here we show that when two graphene sheets are twisted by an angle close to the theoretically predicted 'magic angle', the resulting flat band structure near charge neutrality gives rise to a strongly-correlated electronic system. These flat bands exhibit half-filling insulating phases at zero magnetic field, which we show to be a Mott-like insulator arising from electrons localized in the moiré superlattice. These unique properties of magic-angle twisted bilayer graphene (TwBLG) open up a new playground for exotic many-body quantum phases in a 2D platform made of pure carbon and without magnetic field. The easy accessibility of the flat bands, the electrical tunability, and the bandwidth tunability though twist angle may pave the way towards more exotic correlated systems, such as unconventional superconductors or quantum spin liquids.

Electronic Structures and Quantum Capacitance of Twisted Mixed-Dimensional Van Der Waals Heterostructures of Graphene/c2h Based on Tight-Binding Model

Electronic Structures and Quantum Capacitance of Twisted Bilayer Graphene with Defects Based on Three-Band Tight-Binding Model.

Electronic Structure of 30∘ Twisted Double Bilayer Graphene

Tunability of Multiple Ultraflat Bands and Effect of Spin-Orbit Coupling in Twisted Bilayer Transition Metal Dichalcogenides

Probing Quantum Capacitance of Typical Two-Dimensional Lattices Based on the Tight-Binding Model

First-principles studies of the mixed-dimensional van der Waals heterostructures of graphene/MnF<sub>4</sub>

Spatially Resolved Electronic Structure of Twisted Graphene

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Mesoscopic Electronic Transport in Twisted Bilayer Graphene

A Study of Vertical Transport Through Graphene Toward Control of Quantum Tunneling

Graphene/g-GeC Bilayer Heterostructure: Modulated Electronic Properties and Interface Contact Via External Vertical Strains and Electric Fileds

Twist Angle-Dependent Conductivities Across MoS2/graphene Heterojunctions

Twist Effect on the Electronic and Transport Properties of 1D Helical Carbyne Chains

Twist Angle Dependent Electronic Properties in 2D Graphene/mos2 Vdw Heterostructures

Progress on Band Structure Engineering of Twisted Bilayer and Two-Dimensional Moiré Heterostructures*

Quantum capacitive coupling between large-angle twisted graphene layers

Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices

Stacking order driving bandgap and conductance of graphene/C3B (C3N) van der Waals heterostructures

In situ twistronics of van der Waals heterostructures

Substrate Doping Effect and Unusually Large Angle Van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.

Electrically Tunable Magnetoconductance of Close-Packed CVD Bilayer Graphene Layer Stacking Walls