A Fully Integrated S-Band 1-Watt Phased Array T/R IC in 0.13μm SOI-CMOS Technology
Zengqi Wang,Nan Li,Weitian Liu,Jichao Zhan,Qiao Zhang,Dong Ren,Lei Huang,Yi Xu,Shaoqin Yao,Jianwei Ma,Shuailin Zhou,Li,Jie Ma,Na Yan,Jianhua Lu
DOI: https://doi.org/10.1109/mwsym.2019.8700935
2019-01-01
Abstract:This paper presents a fully integrated S-band T/R ICfor phased array radar applications using 0.13μm SOI-CMOS technology. It integrates all functional blocks in a traditional T/R module, i.e., T/R switch, absorptive power limiter and low noise amplifier (LNA), balanced power amplifier (PA), 6-bit digitally controlled step attenuator (DSA) and phase shifter (PS) and digital control interface. It also integrates power detector for self-diagnosis and second harmonic rejection filter for electromagnetic compliance. Itdraws 1.8A and achieves 31.5dBm peak output power in transmit (TX)mode and draws 0.12A and achieves noise figure (NF) of 2.5dB in receive (RX) mode respectively, with a single 3.3V power supply. The IC only occupies an area of 5.4*5.4mm 2 .