Enhancing Stability and Performance in Tin-Based Perovskite Field-Effect Transistors Through Hydrogen Bond Suppression of Organic Cation Migration

Wenshu Yang,Kai Zhang,Wei Yuan,Lijun Zhang,Chuanjiang Qin,Haibo Wang
DOI: https://doi.org/10.1002/adma.202313461
IF: 29.4
2024-01-01
Advanced Materials
Abstract:Ion migration poses a substantial challenge in perovskite transistors, exerting detrimental effects on hysteresis and operational stability. This study focuses on elucidating the influence of ion migration on the performance of tin-based perovskite field-effect transistors (FETs). It is revealed that the high background carrier density in FASnI3 FETs arises not only from the oxidation of Sn2+ but also from the migration of FA+ ions. The formation of hydrogen bonding between FA+ and F- ions efficiently inhibits ion migration, leading to a reduction in background carrier density and an improvement in the operational stability of the transistors. The strategy of hydrogen bond is extended to fluorine-substituted additives to improve device performance. The incorporation of 4-fluorophenethylammonium iodide additives into FETs significantly minimizes the shift of turn-on voltage during cyclic measurements. Notably, an effective mobility of up to 30 cm2 V-1 s-1 with an Ion/off ratio of 107 is achieved. These findings hold promising potential for advancing tin-based perovskite technology in the field of electronics. High background carrier density in FASnI3 transistors is elucidated, originating from both Sn2+ oxidation and FA+ ion migration. The development of a hydrogen bond strategy through the integration of fluorine-substituted additives effectively suppresses cation migration, thereby reducing background carrier density and enhancing operational stability of the transistors. An impressive effective mobility of 30 cm2 V-1 s-1 is achieved. image
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