Abstract:The migration of intrinsic ions in metal halide perovskites and their interfaces has been shown to contribute to hysteresis and performance degradation in perovskite-based electronic devices, particularly in photovoltaics and transistors. Accordingly, controlling the film morphology, microstructure, and ionic defects in perovskite semiconductors is essential for advancing and achieving high-performance perovskite field-effect transistors (FETs). In this study, we demonstrate a well-controlled method to systematically probe the structure-property relationships, origin of hysteresis, and intrinsic ion migration effects in formamidinium iodide and lead iodide (FAI + PbI 2 )-based perovskite by incorporating it in a semicrystalline conjugated poly(3-hexylthiophene) (P3HT) polymer. Optimized FETs exhibited over 100% hole mobility enhancement owing to unperturbed edge-on crystalline orientation of the P3HT chains caused by the incorporated perovskite, P3HT-(FAI + PbI 2 ) interactions, and better charge injection properties. However, the optimized devices exhibited improved current modulation with dual-sweep hysteresis, which was attributed to the ion migration effect contributed by the polarization of the lead/iodine-related ions and defects. Furthermore, operational stability investigation of the P3HT-(FAI + PbI 2 ) FETs in the air revealed gradual current decay owing to charge trapping in contrast to the control P3HT FETs. This work provides a fundamental understanding of the origin of hysteresis and instabilities in metal perovskite materials and their transistor-based devices.

Ion Migration Induced Unusual Charge Transport in Tin Halide Perovskites

Ion Migration in Tin-Halide Perovskites

Negligible Ion Migration in Tin-Based and Tin-Doped Perovskites

Substitution of Lead with Tin Suppresses Ionic Transport in Halide Perovskite Optoelectronics

Halide ion migration in lead-free all-inorganic cesium tin perovskites

Ion Migration: A “double‐edged Sword” for Halide‐Perovskite‐Based Electronic Devices

Ion Migration in Lead-Halide Perovskites: Cation Matters

Charge transport in mixed metal halide perovskite semiconductors

Significantly suppressing ion migration in metal halide perovskites via trace of multivalent interstitial doping

Suppressing Ion Migration in Metal Halide Perovskite Via Interstitial Doping with a Trace Amount of Multivalent Cations

Intrinsic ion migration dynamics in a one-dimensional organic metal halide hybrid

A New Descriptor for Complicated Effects of Electronic Density of States on Ion Migration

Charge transport and ion migration in perovskite-incorporated conjugated polymer semiconductor

Enhanced Optoelectronic Performance Induced by Ion Migration in Lead-Free CsCu 2 I 3 Single-Crystal Microrods

Ion migration in halide perovskite solar cells: Mechanism, characterization, impact and suppression

High-performance hysteresis-free perovskite transistors through anion engineering

Effect of Monovalent Metal Iodide Additives on the Optoelectric Properties of Two-Dimensional Sn-Based Perovskite Films

Ramifications of Ion Migration in 2D Lead Halide Perovskites

Molecular Doping Enabling Mobility Boosting of 2D Sn2+‐Based Perovskites

Assessing the Drawbacks and Benefits of Ion Migration in Lead Halide Perovskites

Ion migration in p-type perovskite MAPbI3 films under an electric field and thin-film transistor device failure