Ion migration in p-type perovskite MAPbI3 films under an electric field and thin-film transistor device failure

Jiale Su,Zhenxin Yang,Xuanhe Li,Fushun Li,Juntao Hu,Nan Chen,Tao Zhang,Dengke Wang,Zheng-Hong Lu,Qiang Zhu
DOI: https://doi.org/10.1039/d4cc03446e
2024-09-26
Abstract:This study demonstrated a dynamic analysis to investigate the ion migration in p-type perovskite MAPbI3 films under an electric field, revealing its detrimental effects on the electrical performance of MAPbI3-based devices. An additive strategy was proposed to suppress ion migration, thereby facilitating the fabrication of high-performance MAPbI3-based devices.
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