Abstract:As the most basic interconnection metallic material, copper (Cu) has been widely used in giant-large scale integrated circuits (GLSI). Corrosion inhibitors always play a crucial role in the Cu chemical mechanical polishing (CMP) process. The passivation of hydrogen peroxide (H2O2) alone is too weak to adequately protect against chemical corrosion on the surface of Cu film, thus, it is necessary to add corrosion inhibitors to the slurry. As a representative corrosion inhibitor, 1, 2, 4-triazole was compared with a novel corrosion inhibitor known as TT-LYK (ethanol, 2, 2′-[[(methyl-1H-benzotriazol-1-yl) methyl] imino] bis-), and their mixed inhibitor was studied in this paper. Different analytical methods such as the potentiodynamic polarization test, physical appearance phenomenon analysis, contact angle measurement and dynamic polishing experiment were used to compare their inhibition properties, and the fitting of different adsorption isotherms and static erosion tests were used to clarify the adsorption types and passivation processes respectively. The results indicated that both TT-LYK and 1, 2, 4-triazole achieved the goal of inhibiting Cu surface corrosion, but the inhibition effect of TT-LYK was slightly weaker at the same mass fraction. The corrosion protection of the two inhibitors is mainly attributable to the presence of organic inhibitor molecules on the surface of Cu by chemisorption and physisorption simultaneously. The passivation processes of both can be divided into two steps. First, the direct growth of the Cu-inhibitor passivation film occurs, followed by the redeposition of the Cu-inhibitor complex. From the results of electrochemical experiments, it can be concluded that the structure of the thin passivation film growing on the Cu surface varies with the inhibitor, and the composition of the passivation film was investigated by XPS and Raman spectrum analysis. At the same time, the surface roughness after polishing was found to decrease with the increase in inhibition effect of the inhibitors. According to the inhibition characteristics of these two inhibitors, a mixed corrosion inhibitor (TT-LYK and 1, 2, 4-triazole) was proposed in this study. Under the synergistic inhibition action, better inhibition effect and surface quality for Cu CMP were obtained. This outcome may be ascribed to the variation in the structure and density of the passivation film.

First-principles Insight into the PH-dependency of the Corrosion Inhibition Ability of Benzotriazole and 1,2,4-Triazole for Copper in Chemical Mechanical Polishing Slurry

1,2,4-Triazole as a corrosion inhibitor in copper chemical mechanical polishing

Inhibition Mechanism of Benzotriazole in Copper Chemical Mechanical Planarization

Study on the film forming mechanism, corrosion inhibition effect and synergistic action of two different inhibitors on copper surface chemical mechanical polishing for GLSI

Investigation on the Mechanisms of Corrosion Inhibitor 5-aminotetrazole Used in the Copper Chemical Mechanical Polishing

Passivation Kinetics of 1,2,4-Triazole in Copper Chemical Mechanical Polishing

Chemical Roles on Cu-slurry Interface During Copper Chemical Mechanical Planarization

Rational Utilization of the Size and Electronic Effect of Inhibitors Enabling High Polishing Rate with Minimum Corrosion in Copper Chemical Mechanical Polishing

Corrosion inhibition effect of benzimidazole and two derivatives on copper in alkaline environments: experimental and theoretical analyses

Mechanism of 1,2,4-Triazole During Copper Chemical Mechanical Planarization

Electrochemical behavior of slurries used for copper

Experimental and Computational Investigation of Salicylhydroxamic Acid as a Corrosion Inhibitor for Copper in Alkaline Solutions

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Mechanisms of Mixed Corrosion Inhibitors in Copper Chemical Mechanical Polishing

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Corrosion inhibition threshold effect of 1,2,4-triazole in alkaline chemical mechanical polishing of copper: Investigations using synchrotron radiation microinfrared

Inhibitors for Organic Phosphonic Acid System Abrasive Free Polishing of Cu

Characterization of 1, 2, 4-Triazole as Corrosion Inhibitor for Chemical Mechanical Polishing of Cobalt in H2O2 Based Acid Slurry

Theoretical challenges in understanding the inhibition mechanism of copper corrosion in acid media in the presence of three triazole derivatives

First Principle Study of the Adsorption Behavior of 1,2,4-Triazole on Defective Copper Surface

Effect of Corrosion Inhibitor in the Chemical Mechanical Polishing of Copper