Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Miniaturization of Multicolor Quantum Dots Lasing Based on 2D Constrained Resonator

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Tunable Narrowband Carbon Quantum Dots Laser Based on Self‐Assembled Microstructure

Multi-Interfacial Confined Assembly of Colloidal Quantum Dots Quasisuperlattice Microcavities for High-Resolution Full-Color Microlaser Arrays

Multi‐Interfacial Confined Assembly of Colloidal Quantum Dots Quasi‐Superlattice Microcavities for High‐Resolution Full‐Color Microlaser Arrays

Lasing by Template‐Assisted Self‐Assembled Quantum Dots

Tunable Quantum Dot Lasers Grown Directly on Silicon

Low-threshold miniaturized core-shell GaAs/InGaAs nanowire/quantum-dot hybrid structure nanolasers

Controllable Broadband Multicolour Single-Mode Polarized Laser in a Dye-Assembled Homoepitaxial MOF Microcrystal

Compact Optically Controlling the Emission Chirality of Microlasers in Single Subwavelength Particles Supporting Quasi-Bound States in the Continuum

Configurable Integration of On‐Chip Quantum Dot Lasers and Subwavelength Plasmonic Waveguides

Unraveling the Ultralow Threshold Stimulated Emission from CdZnS/ZnS Quantum Dot and Enabling High‐q Microlasers

Ultrastable Low-Cost Colloidal Quantum Dot Microlasers of Operative Temperature Up to 450 K.

Linearly Polarized Broadband Emission and Multiwavelength Lasing in Solution-Processed Quantum Dots

Quantum Dot Self‐Assembly Enables Low‐Threshold Lasing

Dual-color Single-Mode Lasing in Axially Coupled Organic Nanowire Resonators

Dual-Wavelength Lasing in Quantum-Dot Plasmonic Lattice Lasers

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Multicolor Semiconductor Lasers

A New Generation of Multimilliwatt‐Class Colloidal Quantum‐Dot Lasers at Full Colors

Deterministic Assembly of Colloidal Quantum Dots for Multifunctional Integrated Photonics