Abstract:In this contribution, using DFT calculations, we take systematic insights into the modified structural and electronic properties of two-dimensional (2D) blue phosphorus (blueP)/graphene-like (g-C3N) heterostructure via an external vertical strain. First, four types of representative stacking configurations are considered, i.e., I, II, III and IV pattern, respectively. The calculated results indicate that the III configuration behaves more energetically, structurally and dynamic stable, under which it is chosen for the following calculations. The lattice constants of the individual blueP and g-C3N monolayers, along with their calculated band gaps, are consistent with the previous reported works, supporting the reliability of our theoretical models and computational details. Besides, the relatively large difference in the work function (W-F) between the isolated blueP and C3N monolayers illustrates a charge transfer from g-C3N to blueP layer, in good accordance to the analysis of charge density difference and Mulliken atomic population of 0.16 e. A built-in electric field (E-int) has been formed due to the charge transfer at the interface region, which can efficiently hinder the recombination of photongenerated electron-hole pairs, suggesting its significant application prospect in novel optoelectronic devices. A type-II band alignment is presented for the blueP/g-C3N heterostructure, demonstrating it great significance for the application in photoelectronic materials. Furthermore, tunable interlayer distances from 2.2 to 5.0 angstrom are employed to obtain modulated electronic properties for the blueP/g-C3N heterostructure. Interestingly, there occurs a semiconductor-to-metal transition when D larger than 4.6 angstrom, indicating its promising application in the field of electronics and nano-electronics. Moreover, tailored work functions can also be acquired by changing the interlayer distance. These findings together predict significant potential for the blueP/g-C3N heterostructure with tunable interlayer distances applied as next-generation nanoelectronic and optoelectronic devices, along with a photocatalyst.

Tuning Electronic and Optical Properties of Two-Dimensional Vertical Van Der Waals Blue Phosphorene/SnS2 Heterostructure by Strain and Electric Field

Tuning electronic and optical properties of two-dimensional vertical van der Waals blue Phosphorene/SnS 2 heterostructure by strain and electric field

Tuning electronic and optical properties of BlueP/MoSe2 van der Waals heterostructures by strain and external electric field

Modulation of the electronic properties of blue phosphorene/stanene heterostructures by electric field and interlayer distance

First-principles Insights into Efficient Band Gap Engineering of the Blue Phosphorus/g-C3n Bilayer Heterostructure Via an External Vertical Strain

Modulation of electronic and optical properties of BlueP/MoSSe heterostructures via biaxial strain and vertical electric field

First-principles insights of electronic properties of Blue Phosphorus/MoSi2N4 van der Waals heterostructure via vertical electric field and biaxial strain

Exploring tunable optoelectronic properties of two-dimensional GaS/PtSSe heterostructures under biaxial strain and external electric field

Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

Size and strain tunable band alignment of black-blue phosphorene lateral heterostructures.

Density Functional Theory Study of the Electronic and Optical Properties of SnSe 2 /MoSe 2 Heterostructures under Strain and Electric Field: Implications for Optoelectronic Devices

Electronic Properties of Blue Phosphorene/transition Metal Dichalcogenides Van Der Waals Heterostructures under In-Plane Biaxial Strains

Tuning the optoelectronic properties of PtS2/PtSe2 heterostructure via strain engineering

Modulated electronic and optical properties of bilayer/trilayer Blue Phosphorene/MoX2 (X=S, Se) van der Waals heterostructures

Effect of Vertical Strain and In-Plane Biaxial Strain on Type-Ii MoSi2N4/Cs3Bi2I9 Van Der Waals Heterostructure

Tunable electronic structures in BP/MoSSe van der Waals heterostructures by external electric field and strain

Electronic and interfacial properties of 2D mxene/blue phosphorene heterostructures: impact of external strain for thermoelectric applications

Optical and tunable electronic properties of doped PtS2/ZrS2 Van Der Waals heterostructure under the effect of strain and electric field

Mechanical strain and electric field tunable electronic structure of black/violet phosphorene van der Waals heterostructure: From type I to Z-scheme system

Electric Field and Uniaxial Strain Tunable Electronic Properties of the InSb/InSe Heterostructure.

The Electronic and Optical Properties of PC6/WS2 Heterostructure Modulated Via Biaxial Strain and External Electric Field