Electronic Properties of Blue Phosphorene/transition Metal Dichalcogenides Van Der Waals Heterostructures under In-Plane Biaxial Strains

W. X. Zhang,W. H. He,J. W. Zhao,C. He
DOI: https://doi.org/10.1016/j.jssc.2018.05.021
IF: 3.3
2018-01-01
Journal of Solid State Chemistry
Abstract:Using first-principles density functional theory, we have investigated the atomic structural and electronic properties of blue phosphorene/transition metal dichalcogenides BP/XT2 (X = Mo, W; T = S, Se) van der Waals (vdW) heterostructures under in-plane biaxial strains. Our results demonstrate that the strain can effectively tune the band gap of BP/XT2 heterostructures and maintain their high carrier mobility. In addition, BP/MoSe2, BP/WS2 and BP/WSe2 vdW heterostructures exhibit indirect-to-direct band gap transitions when the compressive strains reach to the critical values. Moreover, the BP/WT2 (T = S, Se) heterostructures are type-II vdW heterostructures and could be technologically applied as photocatalytic materials. And BP/MoS2 heterostructure undergoes a semiconduction type transition (type-I to type-II) under the external epsilon, which has potential application as an on-off switch in the photocatalytic material. These results show rich behavior of the strain-based in blue phosphorene/transition metal dichalcogenides vdW heterostructures.
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