The Regulation Effect of Trace Amount of Oxygen on the Properties of P-Type Boron-Doped Diamond

Gengyou Zhao,Kun Tang,Yan Teng,Weikang Zhao,Kai Yang,Shunming Zhu,Shulin Gu

DOI: https://doi.org/10.1557/s43578-024-01312-w

2024-01-01

Abstract:The light doping behavior of boron in microwave plasma chemical vapor deposition diamond films by trace oxygen was investigated. As the oxygen concentration (O/C) increased from 0 to 5

What problem does this paper attempt to address?

Effect of Oxygen on Regulation of Properties of Moderately Boron-Doped Diamond Films

Dong-Yang Liu,Li-Cai Hao,Wei-Kang Zhao,Zi-Ang Chen,Kun Tang,Shun-Ming Zhu,Jian-Dong Ye,Rong Zhang,You-Dou Zheng,Shu-Lin Gu

DOI: https://doi.org/10.1088/1674-1056/ac8e96

2022-01-01

Abstract:Regulation of oxygen on properties of moderately boron-doped diamond films is fully investigated. Results show that, with adding a small amount of oxygen (oxygen-to-carbon ratio < 5.0%), the crystal quality of diamond is improved, and a suppression effect of residual nitrogen is observed. With increasing ratio of O/C from 2.5% to 20.0%, the hole concentration is firstly increased then reduced. This change of hole concentration is also explained. Moreover, the results of Hall effect measurement with temperatures from 300 K to 825 K show that, with adding a small amount of oxygen, boron and oxygen complex structures (especially B3O and B4O) are formed and exhibit as shallow donor in diamond, which results in increase of donor concentration. With further increase of ratio of O/C, the inhibitory behaviors of oxygen on boron leads to decrease of acceptor concentration (the optical emission spectroscopy has shown that it is decreased with ratio of O/C more than 10.0%). This work demonstrates that oxygen-doping induced increasement of the crystalline and surface quality could be restored by the co-doping with oxygen. The technique could achieve boron-doped diamond films with both high quality and acceptable hole concentration, which is applicable to electronic level of usage.
Suppression and Compensation Effect of Oxygen on the Behavior of Heavily Boron-Doped Diamond Films

Li-Cai Hao,Zi-Ang Chen,Dong-Yang Liu,Wei-Kang Zhao,Ming Zhang,Kun Tang,Shun-Ming Zhu,Jian-Dong Ye,Rong Zhang,You-Dou Zheng,Shu-Lin Gu

DOI: https://doi.org/10.1088/1674-1056/ac7f8a

2023-01-01

Chinese Physics B

Abstract:This work investigates the suppression and compensation effect of oxygen on the behaviors and characteristics of heavily boron-doped microwave plasma chemical vapor deposition (MPCVD) diamond films. The suppression effect of oxygen on boron incorporation is observed by an improvement in crystal quality when oxygen is added during the diamond doping process. A relatively low hole concentration is expected and verified by Hall effect measurements due to the compensation effect of oxygen as a deep donor in diamond. A low acceptor concentration, high compensation donor concentration and relatively larger acceptor ionization energy are then induced by the incorporation of oxygen; however, a heavily boron-doped diamond film with high crystal quality can also be expected. The formation of an oxygen-boron complex structure instead of oxygen substitution, as indicated by the results of x-ray photoelectron spectroscopy, is suggested to be more responsible for the observed enhanced compensation effect due to its predicted low formation energy. Meanwhile, density functional theory calculations show that the boron-oxygen complex structure is easily formed in diamond with a formation energy of -0.83 eV. This work provides a comprehensive understanding of oxygen compensation in heavily boron-doped diamond.
Effects of Oxygen/nitrogen Co-Incorporation on Regulation of Growth and Properties of Boron-Doped Diamond Films

Dong-Yang Liu,Kun Tang,Shun-Ming Zhu,Rong Zhang,You-Dou Zheng,Shu-Lin Gu

DOI: https://doi.org/10.1088/1674-1056/ace4b7

2023-01-01

Chinese Physics B

Abstract:Regulation with nitrogen and oxygen co-doping on growth and properties of boron doped diamond films is studied by using laughing gas as dopant. As the concentration of laughing gas (N 2 O/C) increases from 0 to 10%, the growth rate of diamond film decreases gradually, and the nitrogen-vacancy (NV) center luminescence intensity increases first and then weakens. The results show that oxygen in laughing gas has a strong inhibitory effect on formation of NV centers, and the inhibitory effect would be stronger as the concentration of laughing gas increases. As a result, the film growth rate and nitrogen-related compensation donor decrease, beneficial to increase the acceptor concentration (∼3.2 × 10 19 cm −3 ) in the film. Moreover, it is found that the optimal regulation with the quality and electrical properties of boron doped diamond films could be realized by adding appropriate laughing gas, especially the hole mobility (∼700 cm 2 /V⋅s), which is beneficial to the realization of high-quality boron doped diamond films and high-level optoelectronic device applications in the future.
Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

D. Y. Liu,L. C. Hao,Z. A. Chen,W. K. Zhao,Y. Shen,Y. Bian,K. Tang,J. D. Ye,S. M. Zhu,R. Zhang,Y. D. Zheng,S. L. Gu

DOI: https://doi.org/10.1063/5.0009615

IF: 4

2020-07-13

Applied Physics Letters

Abstract:In this work, sulfur addition has been employed on the boron-doped diamond growth process, and a significant regulation of the boron doping and the growth behavior has been realized by microwave plasma chemical vapor deposition. It is interesting to find that the sulfur incorporation will lead to an accordant evolution on the boron doping efficiency, hole mobility and concentration, crystal quality, surface morphology, and growth rate. In the presence of sulfur with appropriate dosage, for a boron-to-carbon ratio of only 2.5 ppm in gas phase during growth, a very high doping concentration of 1.2 × 1019 at/cm3 has been achieved, indicative of a very efficient boron doping. Besides, the hole mobility of the sample is 853 cm2/V s at 300 K, which is better than the state of the art for p-type doping in diamond. The regulation mechanism of the sulfur addition will be discussed from the point of view of sulfur-induced plasma change and possible B–S complex formation. This study may provide an effective way for high-quality p-type conductive diamond layer growth and further for the potential diamond-based opto-electronic device applications.

physics, applied
Influence of Boron Doping on Growth Characteristic of Diamond Films Prepared by Hot Cathode Dc Chemical Vapor Deposition

Lue Jiang-Wei,Feng Yu-Jie,Peng Hong-Ya,Chen Yu-Qiang

DOI: https://doi.org/10.3724/sp.j.1077.2009.00607

IF: 1.292

2009-01-01

Journal of Inorganic Materials

Abstract:Boron-doped diamond films were prepared by hot cathode DC chemical vapor deposition system with B (OCH3)(3) as dopant. The influence of boron (loping on growth characteristic of diamond films was investigated by plasma optical emission spectroscope, scanning electron microscope (SEM), Raman spectroscope, and X-ray diffraction (XRD). Comparing with the growth process for undoped diamond films, it is found that stable glow discharge can sustain for a long time at low boron (loping concentration in hot cathode DC chemical vapor deposition system. The species of glow plasma radicals (H-alpha, H-beta, C-2, CH) do not change after boron doping, while the concentration of C-2 radical increases and the concentration of CH radical decreases. The growth rate of boron-doped diamond film increases to 0.65mg . cm(-2). h(-1). The boron-doped diamond filius possess well-faceted polycrystalline diamond with (111) dominant orientation, and the quality of boron-doped diamond films is improved in comparison with that of undoped diamond films. Boron atoms in the films are located at the substitutional site or interstitial site in diamond lattice, which do not destroy the diamond crystalline structure.
Optical properties of boron-doped diamond

Dan Wu,Y. C. Ma,Z. L. Wang,Q. Luo,C. Z. Gu,N. L. Wang,C. Y. Li,X. Y. Lu,Z. S. Jin

DOI: https://doi.org/10.1103/PhysRevB.73.012501

2005-11-24

Abstract:We report optical reflectivity study on pure and boron-doped diamond films grown by a hot-filament chemical vapor deposition method. The study reveals the formation of an impurity band close to the top of the valence band upon boron-doping. A schematic picture for the evolution of the electronic structure with boron doping was drawn based on the experimental observation. The study also reveals that the boron doping induces local lattice distortion, which brings an infrared-forbidden phonon mode at 1330 cm$^{-1}$ activated in doped sample. The antiresonance characteristic of the mode in conductivity spectrum evidences the very strong coupling between electrons and this phonon mode.

Superconductivity,Materials Science
Effects of boron doping on the growth characteristic of diamond film

WP Liu,QX Yu,YQ Tian,Y Liao,GZ Wang,RC Fang

DOI: https://doi.org/10.3321/j.issn:1000-324X.2005.05.040

IF: 1.292

2005-01-01

Journal of Inorganic Materials

Abstract:Boron-doped diamond thin films, synthesized by the HFCVD method, were analyzed by SEM and XRD. The results show that, when the boron concentration in the films increases, the crystallite orientation changes from (100) to (111), then tends to disorder. The doping of boron reduces the growth parameter alpha. The stress in the films is relaxed by twin crystals in the boron do ping films. Consequently the shift of center phonon line of Raman spectrum becomes smaller.
Heavily boron-doped polycrystalline diamond films: Microstructure, chemical composition investigation and plasma in-situ diagnostics

Yanpeng Gong,Wenru Jia,Bing Zhou,Ke Zheng,Jie Gao,Yanxia Wu,Yongsheng Wang,Shengwang Yu,Yanpeng Xue,Yucheng Wu

DOI: https://doi.org/10.1016/j.apsusc.2024.159838

IF: 6.7

2024-03-14

Applied Surface Science

Abstract:The introduction of boron brings excellent electrical conductivity to diamond films, but also induces uncontrollability of the doping process. Therefore, it is crucial to the monitor of the growth and doping processes. In this work, to establish the correlation between the gas-phase chemical reactions and the microstructure characteristics of heavily boron-doped diamond (BDD) films, the plasma reactions in the chemical vapor deposition (CVD) process of BDD films were in-situ diagnosed and monitored using optical emission spectroscopy (OES), and the effect of different B/C ratios (from 10,000 to 60,000 ppm) on the microstructure, chemical composition were investigated comprehensively. As the B/C ratio increases, the insufficient gas-phase excitation and the "hydrogen abstraction" reaction of BH species lead to a massive loss of H species in the gas-phase of plasma, which is unfavorable for the diamond growth, weakens the etching on sp 2 carbon, induces the development of defects and seriously damages the diamond films quality. The in-situ diagnostics and monitoring of the plasma state can realize the optimization of the growth and doping process for heavily doped polycrystalline BDD films, which is highly significant for its preparation and application.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Morphology, Defects and Electrical Properties of Boron-Doped Single Crystal Diamond under Various Oxygen Concentration

Ruozheng Wang,Bo Peng,Hao Bai,Zhijian Guo,Qiang Wei,Kaiyue Wang,Cui Yu,Gang Niu,Hong-Xing Wang

DOI: https://doi.org/10.1016/j.matlet.2022.132345

IF: 3

2022-01-01

Materials Letters

Abstract:In this work, high quality boron-oxygen co-doped homoepitaxial diamond has been proposed. The morphology of diamond was smooth and flat with the O-2/H-2 ratios less than 1%. The X-ray diffraction, Photoluminescence and Raman spectroscopy illustrated that the substitution of oxygen into diamond lattice could inhibit nitrogen related defects and improve the crystallinity. The Raman mapping showed that tensile stress were formed from film surface to substrate. Under the O-2/H-2 ratio of 1%, the mobility of 892 cm(2)/V.s at boron concentration of 4.7 x 10(17) cm(-3) were obtained, which showed decent electrical properties.
Influence of Boron Dopant on Switching Behaviour of Polycrystalline Diamond Thin Films

XP Wang,LJ Wang,YE Xu,SP Shen

DOI: https://doi.org/10.1088/0256-307x/14/10/014

1997-01-01

Abstract:Switching behaviour of polycrystalline diamond thin films is reported. Boron-doped diamond thin films were deposited by microwave plasma-assisted chemical vapor deposition on silicon substrate. Dependence of switching behaviour on boron impurity has been investigated. The threshold voltage obviously decreases with increasing content of boron dopant.
Influence of the Boron-Doped Layer on the Secondary Electron Emission and Morphology of Diamond Film

Yunrong Wang,Qiang Wei,Ruozheng Wang,Zhangcong Xia,Jie Li,Shengli Wu

DOI: https://doi.org/10.1109/ivec56627.2023.10157718

2023-01-01

Abstract:In this paper, diamond films with different thickness of surface boron-doped were prepared by microwave plasma chemical vapor deposition (MPCVD). The effects of the thickness of boron doping layer on surface morphology, crystal quality and secondary electron emission performance of the diamond films were investigated. The results show that the grain size of the film with boron-doping layer is larger than that of the film without boron-doping layer, but the grain size of the film changes little along with the increase of the thickness of the boron-doping layer. Raman spectra show that the crystal quality of the film is the best situation when the thickness of boron doping layer is 0.5 μm and a higher secondary electron emission coefficient of 7.17 at the incident electron energy 200 $\text{eV}$ is obtained in this case.
Effect of boron doping on luminescent properties of silicon--vacancy and germanium--vacancy color centers in diamond particles obtained by chemical vapor deposition

Grudinkin S. A.,Feoktistov N. A.,Bogdanov K. V.,Baranov A. V.,Golubev V. G.

DOI: https://doi.org/10.21883/pss.2022.10.54243.405

2022-01-01

Physics of the Solid State

Abstract:The effect of doping with boron on the luminescent properties of diamond particles synthesized by Hot Filament Chemical Vapor Deposition technique with color centers embedded during the growth process has been studied. It is shown that at low boron doping level, the photoluminescence intensity of a narrow zero-phonon line of the silicon-vacancy color center (738.2 nm) demonstrates a strong dependence on the concentration of boron atoms at the sites of the diamond lattice. The dependence of the intensity of a broad photoluminescence band in the wavelength range 520-800 nm on the concentration of boron atoms in the gas mixture in the range from 14 to 64000 ppm has been analyzed. The Raman scattering spectra of the obtained particles have been studied. At the concentration of boron atoms in the gas mixture up to 1540 ppm, the Raman scattering spectra of diamond particles practically do not change when the boron concentration is varied. At high boron doping level, the diamond band in the Raman spectra exhibit a spectral response typical of the Fano resonance. Keywords: diamond particles, color centers, boron doping, photoluminescence, chemical vapor deposition.

physics, condensed matter
Influence Of Carbon Source Concentration On Characterization Of Boron-Doped Diamond Electrodes

Yuqiang Chen,Jiangwei Lv,Hongwei Jiang,Hongyan Peng,Yujie Feng,Longcheng Yin,Dan Wang,Hailiang Wang

DOI: https://doi.org/10.4028/www.scientific.net/AMR.204-210.1691

2011-01-01

Abstract:A set of boron-doped diamond (BDD) electrodes were deposited on silicon substrates by direct current plasma chemical vapor deposition (DC-PCVD) system using different carbon source concentrations. The influence of carbon source concentration on characterization of BDD electrodes was investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy and phenol degradation. It was found that BDD films with different carbon source concentrations were polycrystalline films with (111) dominant orientation. The films grew well when carbon source concentration was less than 2.5%, while graphite phase began to form when carbon source concentration was increased to 3%. Boron atoms were located at the substitutional site or interstitial sites in the crystalline lattice of diamond films, and didn't damage the structure of diamond crystal. Within 4 h, 100 mg/L phenol solution in 80 ml could be oxidized by all the electrodes with removal efficiency higher than 90%.
Effect of Nitrogen on Deposition and Field Emission Properties of Boron-Doped Micro- and Nano-Crystalline Diamond Films

L. A. Li,S. H. Cheng,H. D. Li,Q. Yu,J. W. Liu,X. Y. Lv

DOI: https://doi.org/10.1007/bf03353634

IF: 26.6

2010-01-01

Nano-Micro Letters

Abstract:In this paper, we report the effect of nitrogen on the deposition and properties of boron doped diamond films synthesized by hot filament chemical vapor deposition. The diamond films consisting of micro-grains (nano-grains) were realized with low (high) boron source flow rate during the growth processes. The transition of micro-grains to nano-grains is speculated to be strongly (weekly) related with the boron (nitrogen) flow rate. The grain size and Raman spectral feature vary insignificantly as a function of the nitrogen introduction at a certain boron flow rate. The variation of electron field emission characteristics dependent on nitrogen is different between microcrystalline and nanocrystalline boron doped diamond samples, which are related to the combined phase composition, boron doping level and texture structure. There is an optimum nitrogen proportion to improve the field emission properties of the boron-doped films.
In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

André F. Sartori,Martin Fischer,Stefan Gsell,Matthias Schreck

DOI: https://doi.org/10.1002/pssa.201200221

2012-08-08

physica status solidi (a)

Abstract:Abstract In situ boron doping of heteroepitaxial diamond films grown by microwave plasma chemical vapor deposition on Ir/YSZ/Si (001) is investigated. The study comprises the analysis of the gas phase by optical emission spectroscopy (OES) and measurements of B doped films by secondary ion mass spectroscopy (SIMS), cathodoluminescence (CL), and X‐ray diffraction (XRD). The OE intensity of BH species scales linearly with the concentration of the boron precursor trimethylboron (TMB) in the feed gas. Addition of CO 2 as an oxygen source causes a proportional reduction of the BH signal. At a ratio C:O = 1, a reduction factor of ∼50 is obtained. It is shown for two diamond samples that the boron incorporation drops nearly identical to the BH emission intensity. We conclude that the influence of oxygen on boron incorporation is a pure gas phase effect. In contrast, CN and BH emission indicate a negligible interaction between N 2 and TMB added to the feed gas. At the same time, preliminary growth rate measurements show that the boron background pressure in the chamber after growth with TMB completely cancels the growth acceleration by nitrogen up to N 2 concentrations of 100 ppm which points to the dominance of surface processes. Heteroepitaxial diamond films grown on Ir at 50 mbar between 720 and 900 °C contain high intrinsic stress that varies from −2.2 GPa compressive at the lowest to slightly tensile at the highest deposition temperature. The observed behavior is similar to former work at 200 mbar in which effective climb of dislocations was suggested as responsible mechanism. Addition of boron rather enhances the stress formation than causing a relaxation. The B concentration in the heteroepitaxial films is deduced by SIMS, CL, and XRD and correlated with the TMB concentration in the gas phase.
Nitrogen Modulation of Boron Doping Behavior for Accessible N-Type Diamond

D. Y. Liu,L. C. Hao,Y. Teng,F. Qin,Y. Shen,K. Tang,J. D. Ye,S. M. Zhu,R. Zhang,Y. D. Zheng,S. L. Gu

DOI: https://doi.org/10.1063/5.0049151

IF: 6.6351

2021-01-01

APL Materials

Abstract:The n-type doping of diamond is quite difficult, hindering the development of diamond-based electronic devices for decades. In this work, we have designed a boron–nitrogen co-doping technique to realize n-type diamonds. Basically, the activation energy of the donors has been greatly reduced by around 50%, thanks to the successful synthesis of the boron–nitrogen related donor-like complex by a fine control of the synthesis condition. Compared to the sole nitrogen doping scheme, it is found that the co-incorporation of boron elements is beneficial to a lot of aspects, including better crystalline quality, faster growth, higher nitrogen solubility, and stability. With the technique, a p-i-n diamond homojunction has been fabricated. A clear rectification behavior has been recorded, demonstrating that the current co-doping technique we proposed is a feasible path to the accessible n-type diamond.
Optical and Electrical Characterization of Boron-Doped Diamond

Sunil K. Karna,Yogesh. K. Vohra,Samuel T. Weir

DOI: https://doi.org/10.1557/opl.2012.1759

2013-02-01

Abstract:The boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) oriented Type Ib diamond substrates using a Microwave Plasma Chemical Vapor Deposition (MPCVD) technique. Raman spectrum showed a few additional bands at the lower wavenumber regions along with the zone center optical phonon mode for diamond. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. A modification in surface morphology of the film with increasing boron content had been observed by atomic force microscopy. Four point probe electrical measurement indicated that different conduction mechanisms are operating in various temperature regions for these semiconducting films.

Materials Science
The Effect of Boron Doping on the Morphology and Growth Rate of Micron Diamond Powders Synthesized by Hfcvd Method

Tao Zhang,Liang Wang,Fanghong Sun,Bin Shen,Zhiming Zhang

DOI: https://doi.org/10.1016/j.diamond.2013.10.008

IF: 3.806

2013-01-01

Diamond and Related Materials

Abstract:Micron diamond powders are mostly fabricated by crushing the large-sized HPHT diamonds, but they are usually of low quality with the irregular shapes, sharp edges, and protruding points. In the present work, the powders are regrown using HFCVD technique, with the purpose of eliminating their morphological imperfections and developing CVD diamond powders with regular shapes, cubo-octahedral morphology, and smooth surfaces. First, the conventional powders that served as seeds are dispersed evenly on a silicon wafer with a low incidence of agglomeration by the seeding method, based on which a great many of crystals begin to grow simultaneously but independently. The HFCVD system is operating at a low carbon concentration (1.3–1.4%), high substrate temperature (900°C) and active pressure (4500Pa) to inhibit the films growth. Acetone, hydrogen gas, and trimethyl borate (C3H9BO3) are used as source materials. Subsequently, the experiments are conducted to grow the micron diamonds with varying amounts of trimethyl borate in the gas mixture. The studies establish the relationships between the boron concentration and the growth rate, surface morphology and purity of CVD micron diamonds. The results show that the addition of trimethyl borate apparently increases the homoepitaxial growth rate by a factor of 1–2, and helps in the formation of single crystals with the euhedral diamond faces and smooth surfaces. However, a heavy boron doping (5000ppm) readily leads to the growth of ploy-crystals or even films.
First Principles Investigation on the Boron-Oxygen Complexes in Diamond

Ming Zhang,Kun Tang,Kongping Wu,Shunming Zhu,Gengyou Zhao,Yingmeng Huang,Jiandong Ye,Shulin Gu

DOI: https://doi.org/10.1016/j.commatsci.2022.111867

IF: 3.572

2022-01-01

Computational Materials Science

Abstract:The co-doping mechanism of boron and oxygen substitutional complexes in diamond are investigated since the B-O co-doping seems to be a solution for preparing n-type diamond in some experiments. We use first-principles calculations to predict the geometry of a range of B-O complexes in diamond. Three possibly stable configura-tions are confirmed through the formation energy and binding energy. We also find that B-rich complexes are more stable when O sits in the centre position, whereas O tends to be closer to another O in the case of O-rich complexes. Electrically, the former shows a shallow acceptor property while the latter is a neutral impurity by analysing the transition levels, band structures and partial density of states. Our calculation suggests that the B-O scheme may not be a feasible way for effective n-type diamond, but it might be a good method to prepare high-quality p-type diamonds.
The Effects of Boron Doping on the Bulk and Surface Acoustic Phonons in Single-Crystal Diamond

Erick Guzman,Fariborz Kargar,Frank Angeles,Reza Vatan Meidanshahi,Timothy A. Grotjohn,Aaron Hardy,Matthias Muehle,Richard B. Wilson,Stephen Goodnik,Alexander A. Balandin

DOI: https://doi.org/10.48550/arXiv.2206.12000

2022-06-24

Abstract:We report the results of the investigation of bulk and surface acoustic phonons in the undoped and boron-doped single-crystal diamond films using the Brillouin-Mandelstam light scattering spectroscopy. The evolution of the optical phonons in the same set of samples was monitored with Raman spectroscopy. It was found that the frequency and the group velocity of acoustic phonons decrease non-monotonically with the increasing boron doping concentration, revealing pronounced phonon softening. The change in the velocity of the shear horizontal and the high-frequency pseudo-longitudinal acoustic phonons in the degenerately doped diamond, as compared to the undoped diamond, was as large as ~15% and ~12%, respectively. As a result of boron doping, the velocity of the bulk longitudinal and transverse acoustic phonons decreased correspondingly. The frequency of the optical phonons was unaffected at low boron concentration but experienced a strong decrease at the high doping level. The density-functional-theory calculations of the phonon band structure for the pristine and highly-doped sample confirm the phonon softening as a result of boron doping in diamond. The obtained results have important implications for thermal transport in heavily doped diamond, which is a promising material for ultra-wide-band-gap electronics.

Materials Science,Other Condensed Matter

The Regulation Effect of Trace Amount of Oxygen on the Properties of P-Type Boron-Doped Diamond

Effect of Oxygen on Regulation of Properties of Moderately Boron-Doped Diamond Films

Suppression and Compensation Effect of Oxygen on the Behavior of Heavily Boron-Doped Diamond Films

Effects of Oxygen/nitrogen Co-Incorporation on Regulation of Growth and Properties of Boron-Doped Diamond Films

Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

Influence of Boron Doping on Growth Characteristic of Diamond Films Prepared by Hot Cathode Dc Chemical Vapor Deposition

Optical properties of boron-doped diamond

Effects of boron doping on the growth characteristic of diamond film

Heavily boron-doped polycrystalline diamond films: Microstructure, chemical composition investigation and plasma in-situ diagnostics

Morphology, Defects and Electrical Properties of Boron-Doped Single Crystal Diamond under Various Oxygen Concentration

Influence of Boron Dopant on Switching Behaviour of Polycrystalline Diamond Thin Films

Influence of the Boron-Doped Layer on the Secondary Electron Emission and Morphology of Diamond Film

Effect of boron doping on luminescent properties of silicon--vacancy and germanium--vacancy color centers in diamond particles obtained by chemical vapor deposition

Influence Of Carbon Source Concentration On Characterization Of Boron-Doped Diamond Electrodes

Effect of Nitrogen on Deposition and Field Emission Properties of Boron-Doped Micro- and Nano-Crystalline Diamond Films

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

Nitrogen Modulation of Boron Doping Behavior for Accessible N-Type Diamond

Optical and Electrical Characterization of Boron-Doped Diamond

The Effect of Boron Doping on the Morphology and Growth Rate of Micron Diamond Powders Synthesized by Hfcvd Method

First Principles Investigation on the Boron-Oxygen Complexes in Diamond

The Effects of Boron Doping on the Bulk and Surface Acoustic Phonons in Single-Crystal Diamond