Symmetry and Magnetic Direction Dependent Spin/Valley Splitting and Anomalous Hall Conductivity of Antiferromagnetic Monolayer Mnpte3

Wenzhe Zhou,Tingyu Sun,Zhenzhen Wan,Aolin Li,Yu Chen,Fangping Ouyang
DOI: https://doi.org/10.1016/j.mtphys.2024.101389
IF: 11.021
2024-01-01
Materials Today Physics
Abstract:Due to the time reversal symmetry breaking or spin-valley coupling, there are intrinsic valley splittings in two-dimensional magnetic materials, which are closely related to the symmetry and magnetic order. Based on MnPTe3 monolayers with different symmetries, we present an understanding of direction dependent spin/valley splitting and anomalous Hall conductivity from the perspective of orbital interactions. Unlike T-MnPTe3 with central inversion symmetry, in-plane magnetization leads to further non-degeneracy of valley electrons of H–MnPTe3, and the splitted valley states are spin polarized, which is perpendicular to the in-plane magnetization direction. The model and first-principle calculations consistently indicate that the splitting of the valley states is almost proportional to sinθxz, which originates from the difference in spin-up and spin-down interactions introduced by the breaking of spatial inversion symmetry. Regardless of spin degeneracy, non-zero anomalous Hall conductivity occurs with out-of-plane magnetization, and this direction dependent anomalous Hall effect is caused by mirror symmetry breaking from the neighboring Te atoms and spin-orbit coupling. Magnetization direction is an important means of regulating valley/spin splittings and anomalous Hall effect, which has certain significance for realizing spin or valley polarized Hall effect and the research of spintronic or valleytronic devices.
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