First Principles Study of the Electrical,Magnetic and Optical Properties of Ga1-xTixSb(x=0.25,0.50,0.75)

Yao Yunmei,Xiao Qingquan,Fu Shasha,Zou Mengzhen,Tang Huazhu,Zhang Ruiliang,Xie Quan
DOI: https://doi.org/10.12442/j.issn.1002-185x.20220787
2023-01-01
Rare Metal Materials and Engineering
Abstract:Direct band gap semiconductor gallium antimonide (GaSb) has application prospect in fiber optic communication and optoelectronic devices because of its excellent performance. In order to expand the potential application of GaSb in optoelectronic devices and explore new spintronics materials, the electrical, magnetic and optical properties of GaSb with different Ti doping concentrations (denoted as Ga1-xTixSb, where x is the atomic percentage of Ti) were calculated by first-principles. The calculated results show that the energy band structure and the density of states of Ga1-xTixSb generate spin splitting near the Fermi level and form a net magnetic moment, making the Ga1-xTixSb (x=0.25, 0.5, 0.75) shows characteristics of half-metal ferromagnet, dilute magnetic semiconductor and magnetic metallic, respectively. The lattice constant of Ga1-xTixSb increases after optimization. The refractive index, reflectivity and absorption coefficient of Ga1-xTixSb are red-shifted and the optical absorption coefficients of Ga1-xTixSb are higher than that of undoped GaSb in the middle and far infrared band, and the absorption of Ga1-xTixSb becomes better in the middle and far infrared band with the increasing in Ti doping concentration. The calculation results provide a theoretical reference for the expansion of GaSb-based semiconductor materials for applications in infrared detectors and infrared semiconductor lasers and the discovery of new spintronics materials.
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