Strong Intervalley Scattering-Induced Renormalization of Electronic and Thermal Transport Properties and Selection Rule Analysis in 2D Tellurium.

Yujie Xia,Lei Peng,Le Shu,Ao Wu,Hezhu Shao,Ben Li,Juan Zhang,Zhan Sui,Heyuan Zhu,Hao Zhang
DOI: https://doi.org/10.1021/acsnano.3c12457
IF: 17.1
2024-01-01
ACS Nano
Abstract:The electron-phonon interaction (EPI) and phonon-phonon interactions are ubiquitous in promising two-dimensional (2D) semiconductors, determining both electronic and thermal transport properties. In this work, based on ab initio calculations, the effects of intervalley scattering on EPI and higher-order four-phonon interactions of alpha-Te and beta-Te are investigated. Through the proposed selection rules for scattering channels and calculations of full electron-phonon scattering rates, we demonstrate that multiple nearly degenerate local valleys/peaks produce more scattering channels, resulting in stronger intervalley scattering over intravalley scattering. The lattice thermal conductivities of alpha-Te and beta-Te are decreased by as much as 10.9% and 30.8% by considering EPI under the carrier concentration of 2 x 10(13) cm(-2) (n-type) at 300 K compared to those limited by three-phonon scattering, respectively. However, when further considering four-phonon scattering, EPI reduces the lattice thermal conductivities by 2.6% and 19.4% for alpha-Te and beta-Te, respectively. Furthermore, it is revealed that the four-phonon interaction is more dominant in phonon transport for alpha-Te than that for beta-Te due to the presence of an acoustic-optical phonon gap in alpha-Te. Finally, we demonstrate strong intervalley scattering induces significant renormalization effects from EPI on all the constituent parameters of thermoelectric performance. Our results show the contributions of intervalley scattering to the electronic properties as well as thermal transport properties in band-convergent thermoelectric materials are essential and highlight the potential of monolayer tellurium as a promising candidate for advanced thermoelectric applications.
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