Simulation Study of a Low Switching Loss FD-IGBT with High ≪inline-Formula> ≪tex-Math Notation="latex">$di/dt$ ≪/tex-Math> ≪/inline-Formula> and ≪inline-Formula> ≪tex-Math Notation="latex">$dv/dt$ ≪/tex-Math> ≪/inline-Formula> Controllability

Jun Huang,Haimeng Huang,Xinjiang Lyu,Xingbi Chen

DOI: https://doi.org/10.1109/ted.2018.2873598

IF: 3.1

2018-01-01

IEEE Transactions on Electron Devices

Abstract:In this brief, a novel floating dummy insulated gate bipolar transistor (FD-IGBT) is proposed and investigated by simulation. A floating n region and a p+ region shorted with an emitter in the floating p-base region are introduced to form an open-base transistor, and the voltage of the floating p-base region can be clamped by this transistor. In the turn-ON transient, the pile-up of holes in the floating p-base region increases its quasi-Fermi potential and leads to punch-through of the floating n region at a low voltage, which in turn clamps the voltage of the floating p-base region, decreasing the Miller capacitance and thereby the reverse gate charging current from the floating p-base region to the gate. As a result, the proposed FD-IGBT demonstrates not only dramatically reduced turn-ON energy loss for the lower Miller capacitance but also excellent controllability on dI CE /dt and dV CE /dt, and hence on the reverse recovery dV KA /dt of the free-wheeling diode (FWD) for the lower reverse gate charging current. TCAD simulation results indicate that, for the same E ON + E OFF of 90.8 mJ/cm 2 , dI CE /dt of the proposed IGBT and the reverse recovery dV KA /dt of FWD are decreased by 87.7% and 58.2%, respectively, compared with the conventional one.