Abstract:To reduce switching loss, an insulated gate bipolar transistor (IGBT) with an inner primary blocking junction (IPBJ) is proposed and investigated. By inserting a P-drift between the N-drift and carrier storage (CS) layer, a primary blocking junction ( ${J}_{\text {PB}}{)}$ of the P-drift/N-drift junction and a secondary blocking junction ( ${J}_{\text {SB}}{)}$ of the P body/CS layer junction are formed. ${J}_{\text {PB}}$ is in the inner of the drift region and supports most of the blocking voltage. This reduces the electric potential in the CS layer and hole density in the hole inversion layer around the trench gate during the turn-on transient. Consequently, its turn-on loss ( ${E}_{\text {on}}{)}$ and electromagnetic interference (EMI) noise tradeoff relationship is improved. ${J}_{\text {PB}}$ is forward-biased by the ON-state excess hole in the P-drift. Thus, no electric field ( ${E}$ -field) builds in ${J}_{\text {PB}}$ until the excess hole in the P-drift is swept out by the ${E}$ -field extending from the reverse-biased ${J}_{\text {SB}}$ to ${J}_{\text {PB}}$ . Hence, with almost no excess hole in the P-drift, the ${E}$ -field in ${J}_{\text {PB}}$ can build fast in both the P-drift and N-drift directions. This reduces the collector voltage rising time, as well as turn-off loss ( ${E}_{\text {off}}{)}$ . Simulation results show that, compared with the state-of-the-art carrier-stored trench-gate bipolar transistor (CSTBT), the proposed 650-V class silicon IPBJ-IGBT reduces ${E}_{\text {off}}$ by 79.7% with the same ON-state voltage ( ${V}_{\text {on}}{)}$ and reduces ${E}_{\text {on}}$ by 77.9% with the same current overshoot ( ${I}_{\text {peak}}{)}$ . Besides, with its ${E}$ -field and electric potential distribution optimized, the IPBJ-IGBT also improves its blocking characteristic, short-circuit withstand capability, and unclamped inductive switching performance.

A Novel IGBT with High- ${k}$ Dielectric Modulation Achieving Ultralow Turn-Off Loss

A Novel High-Voltage Trench Gate Insulated Gate Bipolar Transistor With Diffusion Remnant Layer

Low On-State Losses Trench IGBT with High-K Dielectric Layer

A Novel IGBT with Variable Conductance Path Realizing Both Low <tex>$V_{on}$</tex> and Turn-off Loss

A Novel IGBT with Variable Conductance Path Realizing Both Low $v_{on}$ and Turn-off Loss

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study

A Low Loss Trench IGBT with Variable Doping Layer in P-base for Improving Turn-off Capability

Numerical Analysis of an Ultralow Switching Loss IGBT with an Inner Primary Blocking Junction

A Novel 4H–SiC/Si Heterojunction IGBT Achieving Low Turn–Off Loss

A Novel Diode-Clamped Carrier-Stored SOI Lateral Superjunction IGBT with Ultralow Turn-off Loss and Saturation Current

Low Turn-Off Loss Lateral Insulated Gate Bipolar Transistor with Double Deep P-Regions

Low Loss Insulated Gate Bipolar Transistor with Electron Injection (EI-IGBT)

The Oppositely Doped Islands IGBT Achieving Ultralow Turn off Loss

Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

An Ultralow Turn-Off Loss SOI-LIGBT with a High-Voltage P-I-n Diode Integrated on Field Oxide

A Low Loss and On-State Voltage Superjunction IGBT with Depletion Trench

1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics

A Reverse Conducting IGBT with Low On-state Voltage and Turnoff Loss

Low Turn-Off Loss 4H-Sic Insulated Gate Bipolar Transistor with a Trench Heterojunction Collector

Optimum Design of 1.4kv Non-Punch-Through Trench Igbts: the Next Generation of High-Power Switching Devices

Optimized Trench IGBT with Dummy Gate and Buried N-Type CS Layer for Substantial Reduction of Power Loss and EMI Noise