Theoretical Analysis of the Concentration and Distribution of Carriers Inyba2cu3…

Rushan Han,Zizhao Gan,Daole Yin,Qing Liao

DOI: https://doi.org/10.1103/physrevb.41.6683

1990-01-01

Abstract:An ionic model and the total-energy method are used to calculate the density and distribution of carriers in ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7\mathrm{\ensuremath{-}}\mathit{x}}$ systems and, in particular, to understand the relationship between the density of carriers and the density of oxygen vacancies in ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7\mathrm{\ensuremath{-}}\mathit{x}}$. It is shown that the density of carriers is normally 1-x per unit cell and the carriers are holes on the oxygen ions in the ${\mathrm{CuO}}_{2}$ planes. In addition, for the 1+ valence copper ions ${\mathrm{Cu}}^{+}$ present in the CuO\ensuremath{\square} plane, the density of ${\mathrm{Cu}}^{+}$ is normally x per unit cell.