Single-band Model of Normal-State Transport Properties of High-Tccopper Oxides

D. Y. Xing,M. Liu
DOI: https://doi.org/10.1103/physrevb.43.3744
1991-01-01
Abstract:In order to account for linear temperature dependences of the in-plane resistivity and Hall carrier density observed in ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7\mathrm{\ensuremath{-}}\mathit{y}}$ and other high-${\mathit{T}}_{\mathit{c}}$ oxides, we have proposed a single-band model consisting of both extended states and localized ones, separated by a mobility edge. The scattering of the extended holes, which carry the current by the localized electrons, is assumed to be the dominant transport mechanism.
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