Single-Band Model Of Normal-State Transport-Properties Of High-Tc Copper Oxides

d y xing,min liu
DOI: https://doi.org/10.1103/PhysRevB.43.3744
IF: 3.7
1991-01-01
Physical Review B
Abstract:In order to account for linear temperature dependences of the in-plane resistivity and Hall carrier density observed in YBa2Cu3O7-y and other high-T(c) oxides, we have proposed a single-band model consisting of both extended states and localized ones, separated by a mobility edge. The scattering of the extended holes, which carry the current, by the localized electrons is assumed to be the dominant transport mechanism.
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