Development of a CMOS MEMS Pressure Sensor with a Mechanical Force-Displacement Transduction Structure

Chao-Lin Cheng,Hsin-Yu Chang,Chung-Yi Chang,Weileun Fang
DOI: https://doi.org/10.1088/0960-1317/25/12/125024
2015-01-01
Journal of Micromechanics and Microengineering
Abstract:This study presents a capacitive pressure sensor with a mechanical force-displacement transduction structure based on the commercially available standard CMOS process (the TSMC 0.18 μm 1P6M CMOS process). The pressure sensor has a deformable diaphragm to support a movable plate with an embedded sensing electrode. As the diaphragm is deformed by the ambient pressure, the movable plate and its embedded sensing electrode are displaced. Thus, the pressure is detected from the capacitance change between the movable and fixed electrodes. The undeformed movable electrode will increase the effective sensing area between the sensing electrodes, thereby improving the sensitivity. Experimental results show that the proposed pressure sensor with a force-displacement transducer will increase the sensitivity by 126% within the 20 kPa–300 kPa absolute pressure range. Moreover, this study extends the design to add pillars inside the pressure sensor to further increase its sensing area as well as sensitivity. A sensitivity improvement of 117% is also demonstrated for a pressure sensor with an enlarged sensing electrode (the overlap area is increased two fold).
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