Abstract:The morphology of the end facet has a great effect on the performance of the one-dimensional semiconductor nanostructure. In terms of the lattice structure, the end facet of synthesized CdS nanostructures is usually hexagonal-shaped. Therefore, morphological tunability of the end facet for CdS is still a challenge. In this work, quasi-rectangular cross-sectional Sn-doped CdS nanowires were successfully synthesized by the chemical vapor deposition method. The crystal and morphological properties of synthesized nanowires were characterized by transmission electron microscopy and scanning electron microscopy. Because of the high crystal quality and well-cleaved surface, optically pumped whispering gallery mode lasing is realized at room temperature with a threshold of 11.3 mW/cm(2). Compared to the hexagonal-shaped Sn-doped CdS nanowires, the tunability of the output mode is achieved. Temperature-dependent photoluminescence spectra were measured, and the temperature coefficient is determined to be -0.515 meV.K-1. In addition, the activation energy was fitted to be 43.01 meV, illustrating that the main carrier decay channel exhibits exciton recombination. The quasi-rectangular cross-sectional Sn-doped CdS nanowire-based photodetectors presented a maximum current on/off ratio of 3 X 10(2). The photoresponsivity and specific detectivity were estimated to be 0.22 mA/W and of 1.14 x 10(12) Jones under the illumination of 405 nm laser with a laser density of 495 mu W/cm(2) at V-DS = 3 V. Moreover, n type doping behavior is determined by the field effect transistor device, and the field effect mobility is calculated to be 0.18 cm(2).V-1.s(-1). Our work provides a new way to tailor the properties of CdS for the application in integrated photonic and optoelectronic devices.

Comparison of the Optical Waveguide Behaviors of Se-Doped and Undoped CdS Nanoribbons by Using Near-Field Optical Microscopy

Optical Waveguide Behavior of Se-doped and Undoped CdS One-Dimensional Nanostructures Using Near-Field Optical Microscopy

Near-Field Detected Photoluminescence Spectra of Sds(0.65)Se(0.35) Nanoribbon at Room Temperature

Lasing Characteristics of Curved Semiconductor Nanowires

Optical Waveguide Through CdS Nanoribbons

Self-Absorption Effect in the Spatial Resolved Spectra of CdS Nano-Ribbon Optical Waveguide Observed by Near-Field Spectroscopy

Color-changeable Optical Transport Through Se-doped CdS 1D Nanostructures.

Optical and Optoelectronic Performances of Quasi-Rectangular Cross-Sectional Sn-Doped CdS Nanowires

Fabrication and micro-photoluminescence property of CdSe/CdS core/shell nanowires

Photoluminescence and Photoconductivity Properties of Copper-Doped Cd1−xZnxS Nanoribbons

Near infrared emission band and origin in Ni(II)-doped cds nanoribbons by cvd technique

Color-Changeable Properties Of Plasmonic Waveguides Based On Se-Doped Cds Nanoribbons

Photoluminescence Properties of Single Cds Nanorods

Growth and photoluminescence of CdS and CdS:Mn Nanoribbons

Simulated Emission Behaviors from Excitons in CdS Nanoribbons

Optical Characterization of Bare CdSe and CdSe/CdS Core/shell Nanocrystals

Reconfiguring the Optical Selection Rule in Ultramicrotome‐Crafted Vertically Aligned InSe Ribbons

Surface-enhanced Raman scattering and polarized photoluminescence from catalytically grown CdSe nanobelts and sheets

Optical Performance of Cadmium Sulfide/silicon Nanowire Heterostructure Arrays Prepared by SILAR Technique

Anti-Reflection Characteristics of Si Nanowires for Enhanced Photoluminescence from CdTe/CdS Quantum Dots

Well Improved Photoswitching Characteristic of Cdse Nanorods Via Cds Nanoparticle-Decoration