Abstract:A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d states and the relative energetic alignment - and hence internal electric fields - within the LaAlO3 layer. Firstly, the Ti 2p core level spectra clearly show occupation of Ti 3d states already for two unit cells of LaAlO3. Secondly, the LaAlO3 core levels were seen to shift to lower binding energy as the LaAlO3 overlayer thickness, n, was increased - agreeing with the expectations from the canonical electron transfer model for the emergence of conductivity at the interface. However, not only is the energy offset of only 300meV between n=2 (insulating interface) and n=6 (metallic interface) an order of magnitude smaller than the simple expectation, but it is also clearly not the sum of a series of unit-cell by unit-cell shifts within the LaAlO3 block. Both of these facts argue against the simple charge-transfer picture involving a cumulative shift of the LaAlO3 valence bands above the SrTiO3 conduction bands, resulting in charge transfer only for n>3. Turning to the theoretical data, our density functional simulations show that the presence of oxygen vacancies at the LaAlO3 surface at the 25% level reverses the direction of the internal field in the LaAlO3. Therefore, taking the experimental and theoretical results together, a consistent picture emerges for real-life samples in which nature does not wait until n=4 and already for n=2, mechanisms other than internal-electric-field-driven electron transfer from idealized LaAlO3 to near-interfacial states in the SrTiO3 substrate are active in heading off the incipient polarization catastrophe that drives the physics in these systems.

Formation and Observation of a Quasi-Two-DimensionaldxyElectron Liquid in Epitaxially StabilizedSr2−<…

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Formation of orbital-selective electron states in LaTiO$_3$/SrTiO$_3$ superlattices

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces

Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction

Hard x-ray photoemission and density functional theory study of the internal electric field in SrTiO3/LaAlO3 oxide heterostructures

Chemistry and structure of homoepitaxial SrTiO$_3$ films and their influence on oxide-heterostructure interfaces

Evolution of the SrTiO$_3$ surface electronic state as a function of LaAlO$_3$ overlayer thickness

Localization of Two-dimensional Electron Gas in LaAlO3/SrTiO3 Heterostructures

Intrinsic Versus Extrinsic Orbital and Electronic Reconstructions at Complex Oxide Interfaces

Reversible Formation of 2D Electron Gas at the LaFeO 3 /SrTiO 3 Interface via Control of Oxygen Vacancies.

Epitaxial Strain-Induced Chemical Ordering in La0.5Sr0.5CoO3−δ Films on SrTiO3

High-mobility spin-polarized two-dimensional electron gas at the interface of LaTiO3/SrTiO3 (110) heterostructures

Infrared study of the quasi-two-dimensional electron system at the interface between SrTiO$_{3}$ and crystalline or amorphous LaAlO$_3$

Electronic Structure of Oxide Interfaces: A Comparative Analysis of GdTiO$_3$/SrTiO$_3$ and LaAlO$_3$/SrTiO$_3$ Interfaces

A Laser-ARPES View of the 2D Electron Systems at LaAlO3/SrTiO3 and Al/SrTiO3 Interfaces

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Two-dimensional electron liquid state at LaAlO3-SrTiO3 interfaces

Stoichiometric control of electron mobility and 2D superconductivity at LaAlO 3 -SrTiO 3 interfaces