Excitonic Properties of Semiconducting Monolayer and Bilayer MoTe2

Cédric Robert,Raphaël Picard,Delphine Lagarde,G Wang,J. P. Echeverry,Fabian Cadiz,Pierre Renucci,Alexander Högele,T. Amand,Xavier Marie,Iann C. Gerber,Bernhard Urbaszek

DOI: https://doi.org/10.1103/physrevb.94.155425

2016-01-01

Abstract:$\mathrm{MoT}{\mathrm{e}}_{2}$ belongs to the semiconducting transition-metal dichalcogenide family with certain properties differing from the other well-studied members $(\mathrm{Mo},\mathrm{W}){(\mathrm{S},\mathrm{Se})}_{2}$. The optical band gap is in the near-infrared region, and both monolayers and bilayers may have a direct optical band gap. We first simulate the single-particle band structure of both monolayer and bilayer $\mathrm{MoT}{\mathrm{e}}_{2}$ with density-functional-theory-$GW$ calculations. We find a direct (indirect) electronic band gap for the monolayer (bilayer). By solving in addition the Bethe-Salpeter equation, we find similar energies for the direct exciton transitions in monolayers and bilayers. We then study the optical properties by means of photoluminescence (PL) excitation, reflectivity, time-resolved PL, and power-dependent PL spectroscopy. With differential reflectivity, we find a similar oscillator strength for the optical transition observed in PL in both monolayers and bilayers suggesting a direct transition in both cases. We identify the same energy for the $B$-exciton state in the monolayer and the bilayer. Following circularly polarized excitation, we do not find any exciton polarization for a large range of excitation energies. At low temperatures $(T=\phantom{\rule{0.16em}{0ex}}10\phantom{\rule{0.16em}{0ex}}\mathrm{K})$, we measure similar PL decay times on the order of 4 ps for both monolayer and bilayer excitons with a slightly longer one for the bilayer. Finally, we observe a reduction of the exciton-exciton annihilation contribution to the nonradiative recombination in bilayers.