A Novel LDMOS Power Amplifier in Patterned-SOI Technology for Base Station Applications

Xinbin Cheng,Hongtao Wang,Song Zhao-rui,Yuehui Yu,Yuan Kai,Zhenzhen Xu
2006-01-01
Abstract:A novel PSOI(Patterned-Silicon-On-Insulator) LDMOSFET with a silicon window beneath P body is proposed and simulated.The novel LDMOSFET did not degrade the advantage of SOI structure's low leakage current and parasitic capaci-tance,which also suppressed the self-heating effects and floating body effects.The on-state and the off-state breakdown voltage was 30V and 70V respectively.The cut-off frequency and the maximum oscillation frequency was 6.2GHz and 20GHz respec-tively,the output power and power gain at 2GHz was 0.8W/mm and 28dB respectively,which was sufficient for a 2GHz,60V-class base station amplifier applications.
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