Reversed Bipolar Resistive Switching Behaviors Modulated by Scanning Voltage Amplitude in Polycrystalline NiO_x Films

Jin Huang

2015-01-01

Abstract:NiO-based metal-insulator-metal structures have been widely studied for resistive switching random access memory device applications since 1960 s.Researchers prefer to improve their resistive switching parameters(ON/OFF ratio,stability,endurance and retention performances etc.) than discuss their switching direction changes.In this paper,we have studied the reverse of resistive switching directions in polycrystalline Ni Ox films modulated by scanning voltage amplitude.60 nm-thick polycrystalline Ni Ox films with a [200] preferred orientation have been grown by radio frequency magnetron sputtering under optimized deposition conditions(deposited at 280°C in 3 Pa Ar+O2 mixed ambient with an oxygen partial pressure of 20%).Ag/Ni Ox/Pt memory cells exhibit reversed bipolar resistive switching behaviors modulated by scanning voltage amplitude.When applying a scanning voltage lower than ±2 V,they present anticlockwise current-voltage loops with good ON/OFF ratios(50),but poor durability(~50 switching cycles).Once the scanning voltage increases to ±2 V,those memory cells obtain clockwise current-voltage loops with a lower ON/OFF ratio of 10,but better durability(~120 switching cycles).The logarithmic plots and power-law fittings for current-voltage log curves demonstrate that ohmic conduction processes are dominated on both the low and high resistance state for the anticlockwise current-voltage loop.For the clockwise current-voltage loop,an ohmic conduction process is still dominated on the low resistance state,while a trap-controlled space-charge limited current conduction process is responsible for the current transport on the high resistance state when applying a high electric field.The formation and annihilation of filamentary conducting paths composed by oxygen vacancies are responsible for the anticlockwise resistive switching behaviors; while the synthesis and decomposition of Ag Ox due to the oxidation/reduction reactions between the diffusing silver ions and the drifting oxygen ions result in the clockwise resistive switching behaviors.