Abstract:Large-scale molecular dynamics (MD) simulations, along with bond-order interatomic potentials, have been employed to study defect production, clustering and their evolution within high energy displacement cascades in semiconductors. Based on the MD results, the damage density within a cascade core is evaluated, and used to describe a new energy partition function. In addition, we have further developed a model to determine the non-ionizing energy loss (NIEL) for semiconductors, which can be used to predict the displacement damage degradation induced by space radiation on electronic components. The atomic-level based NIEL model has been applied to GaAs and GaN. At low energies, the most surviving defects are single interstitials and vacancies, and only 20% of the interstitial population is contained in clusters in GaAs, but a direct-impact amorphization in GaAs occurs with a high degree of probability during the cascade lifetime for Ga PKAs (primary knock-on atoms) with energies higher than 2 keV. However, a large number of atoms will be displaced during the collisional phase with a compacted cascade volume in GaN, and consequently, a great number of displaced atoms recombine significantly with vacancies at the same time, i.e., a pseudo-metallic behavior (PMB). This leads to the result that the majority of surviving defects are just single interstitials or vacancies for all recoil energies considered with only a small number of defects forming clusters. The total number of defects simulated in GaN can be very well predicted by the simplied Norgett, Robison and Torrens (NRT) formula due to the PMB, in contrast to GaAs where the defect number becomes much larger than the NRT value. The calculated NIEL in GaN is often found smaller than that predicted by a model based on the simple Kinchin-Pease formula. The comparisons of defect creation, density and effective NIEL in GaN to those of GaAs suggest that GaN may be much more resistant to displacement damage than GaAs, and therefore, very suitable for use in high-power space-energy systems and space-probe applications.

Threshold Displacement Energy Map of Frenkel Pair Generation in Β-Ga2o3 from Machine-Learning-Driven Molecular Dynamics Simulations

Threshold displacement energy map of Frenkel pair generation in $\rm Ga_2O_3$ from machine-learning-driven molecular dynamics simulations

Atomic-displacement threshold energies and defect generation in irradiated β-Ga2O3: A first-principles investigation

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Atomic displacement threshold energies and defect generation in GaN, AlN, and AlGaN: A high-throughput molecular dynamics investigation

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Simulation of Neutron and Proton Displacement Damage in Ultra-Wide Bandgap Semiconductor Ga2O3

Stability and Interaction of Cation Frenkel Pair in Wurtzite Semiconductor Materials

Oxygen Vacancies and Local Amorphization Introduced by High Fluence Neutron Irradiation in Β -Ga2o3 Power Diodes

Defect energy levels in monoclinic β-Ga2O3

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Library of intrinsic defects in β-Ga2O3: First-principles studies

Modification of β-gallium oxide electronic properties by irradiation with high-energy electrons

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3

Band Offsets at β/γ-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ Interface

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Unraveling optical degradation mechanism of β -Ga2O3 by Si4+ irradiation: A combined experimental and first-principles study

Atomic-level based non-ionizing energy loss: an application to GaAs and GaN semiconductor materials

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Deep-level Defects in Gallium Oxide