Abstract:Gallium sesquioxide (β-Ga2O3) acts as a prime candidate for next-generation power electronics, of which complex defects largely impact its electrical performances and limit its practical applications. Herein, using the first-principles method, various intrinsic defects (63 in total) are systematically investigated, including point defects and complexes, of which properties involve formation energies, transition levels, binding energies, etc. It is demonstrated that most defects are likely easier to form under Ga-rich chemical conditions, in which VO, Gai, GaO, OGa-GaO, Oi-GaO, and GaO-VGa defects are metastable to be probably detected in the experiment. Combing with deep-level transient spectroscopy (DLTS) experiments, it is preferred that OGa-VGaI(4-/6-) are related to the unknown experimental level E C-0.12–0.28 eV; Gai(+3/+1), GaOII(+3/+1) or Oi-GaOIII(+3/+1) are related to the level E C-0.74–0.82 eV; GaOIII(+3/+1), Oi-GaOI(+3/+1), Oi-GaOII(+3/+1) or OGa-GaOII(+2/0) are related to the level E C-0.95–1.1 eV; VOIII(+2/0), GaO-VGaII(+2/0) or OGa-GaOI(+2/0) are associated with level E C-1.2–1.48 eV; VOI(+2/0), OGa-VOI(1-/3-) or OGa-VOII(1-/3-) are associated with level E C-2.0–2.3 eV; OGa-VOII(+3/+2) is associated with level E C-4.37–4.38 eV. Although the uncertainty of the consistency between our theoretical predictions and experiments always remains due to the complex atomic structure and low symmetry, our findings provide a near-complete database in combination with experimental observations to define and identify defects in β-Ga2O3, which has a profound impact on understanding the radiation damage and degradation of β-Ga2O3 devices.

Ultrahigh stability of oxygen sublattice in

Ultrahigh Stability of O-Sublattice in $β$-Ga$_2$O$_3$

Universal radiation tolerant semiconductor

Orientation-dependent surface radiation damage in $β$-Ga2O3 explored by multiscale atomic simulations

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3

Threshold Displacement Energy Map of Frenkel Pair Generation in Β-Ga2o3 from Machine-Learning-Driven Molecular Dynamics Simulations

Phase glides and self-organization of atomically abrupt interfaces out of stochastic disorder in $α$-Ga$_{2}$O$_{3}$

Atomic-displacement threshold energies and defect generation in irradiated β-Ga2O3: A first-principles investigation

Oxygen Vacancies and Local Amorphization Introduced by High Fluence Neutron Irradiation in Β -Ga2o3 Power Diodes

Interplay of the disorder and strain in gallium oxide

Oxygen-close-packed (310)-Plane Substrates of Β-Ga2o3 Grown by the Casting Method

Disorder-induced ordering in gallium oxide polymorphs

Intrinsic High-Temperature Ferroelectricity, Superferroelasticity, and Deep-Ultraviolet Nonlinear Optical Response of GaOCl Monolayer

Optical activity and phase transformations in γ/β Ga2O3 bilayers under annealing

Influence of Polymorphism on the Electronic Structure of Ga$_2$O$_3$

Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3

Threshold displacement energy map of Frenkel pair generation in $\rm Ga_2O_3$ from machine-learning-driven molecular dynamics simulations

Library of intrinsic defects in β-Ga2O3: First-principles studies

Structural, Thermal, and Electronic Properties of Two-Dimensional Gallium Oxide (β-Ga2 O3 ) from First-Principles Design

Exploring the Crystal Structure and Electronic Properties of γ-Al2O3: Machine Learning Drives Future Material Innovations

Perspective on atomic scale investigation of point and extended defects in gallium oxide