Electro-optofluidics: Achieving Dynamic Control On-Chip

Zhi Liu,Weixuan Hu,Shaojian Su,Chong Li,Chuanbo Li,Chunlai Xue,Yaming Li,Yuhua Zuo,Buwen Cheng,Qiming Wang
DOI: https://doi.org/10.1364/oe.20.022327
IF: 3.8
2012-01-01
Optics Express
Abstract:Ge/Si heterojunction light emitting diodes with 20-bilayers undoped or phosphorus in situ doped GeSi islands were fabricated on n(+)(-)Si(001) substrates by ultrahigh vacuum chemical vapor deposition (UHV-CVD). Enhanced room temperature photoluminescence (PL) and electroluminescence (EL) around 1.5 μm were observed from the devices with phosphorus-doped GeSi islands. Theoretical calculations indicated that the emission is from the radiative recombination in GeSi islands. The intensity enhancement of PL and EL is attributed to the sufficient supply of electrons in active layer for radiative recombination.
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