Abstract:Photolithography has been the driving force for the continuous design rule shrink where the manufacturing linewidth has been evolving from the early a few micrometers in the 1970's to the current several tens of nanometers and is due to develop into the future single-digit-nanometer technologies. Throughout the past years, both the Front-End-Of-the-Line (FEOL) device performance and the Back-End-Of-the-Line (BEOL) metal routing performance have been related to the photolithography process quality. There are several key parameters that we use to characterize the quality of a lithography process, such as, Exposure Latitude (EL), Depth of Focus (DoF), and relatively later added Mask Error Factor (MEF). All of these parameters are related to the linewidth uniformity, including, the within exposure field uniformity, the across wafer uniformity, and the across pattern uniformity (Optical Proximity Effect, OPE). For photoresists, the important parameters are the photo-sensitivity, the photoacid diffusion length, the PhotoAcid Generator (PAG) loading, the dissolution contrast, etc. Among all the parameters, there are trade-offs and possible areas for mutual compensation. The industry standard is a set of rules or practices that can best reflect the needs for performance, reliability, cost, and short time- to- market. In this paper, we will present our studies on the setting up of industry standards for photolithography with the analysis of the photolithographic process at typical past technology nodes and Extreme Ultra-Violet (EUV) technology nodes with future outlook and proposal.

A Further Analysis of the Forbidden Pitch in Photolithography in Advanced Technology Nodes.

Sub-diffraction Optical Beam Lithography Based on a Center-Non-zero Depletion Laser

Single-color Peripheral Photoinhibition Lithography of Nanophotonic Structures

High-speed two-photon lithography based on femtosecond laser

Dip-In Photoresist for Photoinhibited Two-Photon Lithography to Realize High-Precision Direct Laser Writing on Wafer.

Subdiffraction 3D Nanolithography by Two‐Photon Two‐Step Absorption and Photoinhibition

Light and Matter Co-Confined Multi-Photon Lithography

Photolithography Using Lateral Surface of Nanofibers

Some studies on the interactions and propagating effects in OPC

Considerations in the Setting Up of Industry Standards for Photolithography Process, Historical Perspectives, Methodologies, and Outlook

High Depth-of-Field Nanostructures by Rotational Near-Field Photolithography

A Study of the Advantages to the Photolithography Process Brought by the High NA EUV Exposure Tool in Advanced Logic Design Rules

Process Window, and Process Optimization in Both Low and High Na EUV Processes for Advanced Logic Technologies Nodes

Advanced nano-lithography technology

Efficient measurement and optical proximity correction modeling to catch lithography pattern shift issues of arbitrarily distributed hole layer

Effect of Plasmonic Lens Distribution on Flight Characteristics in Rotational Near-Field Photolithography

Edge-based near-field photolithography optical proximity effect correction technique

From Computational Lithography to Computational Inspection: Inverse Lithography Technology (ILT) and Inverse Inspection Technology (IIT)

A New Method of Implementing Hierarchical OPC

Mitigating the forbidden pitch of extreme ultraviolet lithography using mask optimization based on genetic algorithm

Advanced lithography materials: From fundamentals to applications