Experiment on the New Structure of 8 Mm Integrated Balance Mixer

Hao Luo

2006-01-01

Abstract:This paper describes two kinds of Ka-band integrated balance mixers. One uses circuit ring structure,the other uses racetrack ring structure. The experiment results show that the latter one reduces loss and improves the working frequency band. Their design method and process shed light on the design of balance mixer in other frequency band.

What problem does this paper attempt to address?

A group-selected and gain controllable CMOS active mixer for UWB applications

Boyu Hu,XiaoPeng Yu,Lenian He

DOI: https://doi.org/10.1109/ICUWB.2010.5614226

2010-01-01

Abstract:This paper presents a group-selected (GS) and gain controllable (GC) active mixer designed for ultra-wide-band (UWB) receiver. The double-balanced Gilbert-type configuration, current bleeding technique and resonating technique for tail capacitance are incorporated in the proposed mixer. A switched capacitance network (SCN) is used to control the resonant frequency of the tail capacitance for the group selection. Digitally controlled tail current source and bleeding current source are used to justify and compensate the loss of conversion gain due to the switched capacitance network while working at low frequency groups. These two techniques greatly enhance the conversion gain and noise performance in each group. Designed in a standard 0.18-μm CMOS technology, the mixer achieves a conversion gain of 17dB, a minimum noise figure of 7.31dB and an input IP3 of -6dBm over the 3.432GHz~7.656GHz frequency range for UWB groups #1~#3. It consumes a minimum 9mW from a 1.8V supply.
Design and Analysis of an Ultrawide-Band Distributed Drain-Pumped Mixer Using 0.18µm CMOS Technology

Boyu Nie,Jinfang Zhou,Kangsheng Chen

DOI: https://doi.org/10.1109/primeasia.2009.5397456

2009-01-01

Abstract:This paper proposes the design and analysis of a broadband 2–40 GHz passive distributed drain-pumped mixer using 0.18µm CMOS technology for ultrawide-band (UWB) receivers. To achieve broad bandwidth for the UWB communications, a distributed topology is introduced. A closed-form analytical model for the conversion loss of distributed drain-pumped mixer is presented for the first time. The designed three-stage drain-pumped mixer consumes zero dc power and exhibits a low and flat conversion loss of 5±1dB from 2 to 40 GHz. The single side-band (SSB) noise figure (NF) is below 12.6 dB for the entire range of frequencies and the minimal SSB NF of 10.7 dB achieves at 33 GHz. An input third-order intercept point of 17 dBm achieves at 10 GHz. This mixer is well suitable for low power-consuming, wideband monolithic microwave integrated circuit (MMIC) implementation.
MMIC on-Wafer Test Method Based on Hybrid Balanced and Unbalanced RF Pad Structures

Yue Bian,Yifan Gu,Xu Ding,Zhiyu Wang,Jiongjiong Mo,Faxin Yu

DOI: https://doi.org/10.3390/electronics7090208

IF: 2.9

2018-01-01

Electronics

Abstract:Nowadays, more and more MMICs (Microwave Monolithic Integrated Circuit), such as limiters and switches, are designed to have balanced and unbalanced test pad structures to solve the challenging size restrictions and integration requirements for MMICs. Hybrid balanced and unbalanced RF (Radio Frequency) probes are adopted for an on-wafer test of the heteromorphy structures. The thru standard based on single balanced or unbalanced structures cannot meet the impedance matching requirements of the hybrid RF probes at the same time, which leads to a dramatic decreasing of the calibration accuracy and cannot satisfy the requirement of MMIC test. Therefore, in this paper, the calibration error estimating of hybrid RF probes based on traditional SOLR (Short Open Load Reciprocal) calibration method is performed, and an on-wafer test approach of MMIC based on hybrid balanced and unbalanced RF probes is proposed which combines the OSL (Open Short Load) second-order de-embedding technique with vector error correction and the matrix transformation technique. The calibration reference plane can be accurately shifted to the probe tip with this method, which greatly improves the test accuracy, and an automatic test system is built for this method based on the object-oriented C# language.
A 27 - 57 GHz Down-conversion Mixer with Bulk Injection Technique

Qianyi Dong,Liang Qiu,Shengjie Wang,Huiyan Gao,Kailong Zhao,Zhonglan Qian,Jiangbo Chen,Yen-Cheng Kuan,Qun Jane Gu,Chunyi Song,Zhiwei Xu

DOI: https://doi.org/10.1109/ims37962.2022.9865567

2022-01-01

Abstract:A millimeter-wave (mm-Wave) down-conversion mixer biased at Class-B condition with bulk injection (BI) to reduce the local oscillation (LO) power requirement is proposed to enhance the conversion gain (CG) and linearity. The measurement shows this mixer achieves a peak CG of 18 dB, a measured 3-dB radio frequency (RF) simultaneous bandwidth of 27 - 57 GHz (71.4%) and dc power consumption of 6 mW at LO drive power of −7 dBm. The mixer demonstrates a 4-dBm input third-order intercept point (IIP3), a −8-dBm input 1-dB compression point (IP1dB) and a 12.8-dB noise figure (NF) at 39 GHz.
Design and Fabrication of a TR Microsystem in Ka Band with Si-Based 3D Heterogeneous Integration

Faxin Yu,Xi Guo,Siyuan Ma,Chenge Wang,Guangjian Feng,Zhiyu Wang

DOI: https://doi.org/10.1109/tcpmt.2024.3385319

2024-01-01

IEEE Transactions on Components Packaging and Manufacturing Technology

Abstract:This article demonstrated the design and fabrication of a transmitter and receiver (TR) microsystem in Ka-band based on silicon 3-D heterogeneous-integration (3D-HI). To achieve this microsystem, we proposed a novel silicon interposer with bonded metal on the redistribution layer (RDL), which solved the compatibility problem involved in eutectic bond and wirebond processes. A brand new temperature-gradient-free stacking method achieved by printing conductive adhesive bonding technology is also presented, which reduces the stacking temperature while introducing no extra temperature-gradient. Based on these technologies, a four-channels T/R microsystem with a 6-bit phase for both T/R channels, smaller than $9.5\times 9.8\times 2$ mm, lighter than 0.3 g and working at 33-35 GHz is fabricated, whose receive noise figure is lower than 5.7 dB and the maximum output power exceeds 25 dBm.
PLANAR W-BAND MIXER WITH A NOVEL IF-BLOCK

Ming Zhou Zhan,Quansheng Xu,Wei Zhao,Yong Zhang,Rui-Min Xu,Weigan Lin

DOI: https://doi.org/10.2528/pierc11022405

2011-01-01

Progress In Electromagnetics Research C

Abstract:A planar W-band single balanced mixer is designed and measured in this paper. This mixer is realized by using two novel IF- block, a rat-race ring with the flfth port, two beamlead GaAs Schottky diodes and two RF chokes. The novel IF-block which designed the flrst time in W-band is employed to provide re∞ection points for IF signal and to provide low loss path in wide bandwidth for the RF and LO signals. To our knowledge, the mixer shows the best conversion loss at 95GHz and the highest 1dB power compression (Pi1dB) point among the W-band planar hybrid microwave integrated circuit (HMIC) mixers.
Design and Implementation of a Millimeter Wave Monolithic Integrated Mixer

Baoxin Gao,Ke Gong,Yingxin Sun,Guanhui Iang

DOI: https://doi.org/10.1023/A:1022640522335

1999-01-01

International Journal of Infrared and Millimeter Waves

Abstract:This paper discusses design and implementation of a millimeterwave monolithic integrated balanced mixer, the measured performance compared with the predicted one is also reported. By designing this MMIC mixer, various mathematical methods are used, in which the Method of Conversion Matrix has been extended by the author to meet the requirement of inter-modulation analysis. The mixer is realized in a 2×3mm 2 GaAs chip, working in Ka band with bandwidth of 5GHz with a noise figure less than 10 dB.
Millimeterwave Monolithic Integrated Mixer

BX Gao,K Gong,YX Sun,GH Jiang

DOI: https://doi.org/10.1109/icmwft.1996.574821

1996-01-01

Abstract:This paper presents a Millimeterwave Monolethic integrated balanced mixer, including its design and analysis method, its circuit and implementation, and the measured performance compared with the predicted one. By designing this MMIC mixer various mathematical methods are used, in which the Method of Conversion Matrix has been extended to meet the requirement of intermodulation analysis. The mixer is realized in a 2x3mm(2) GaAs chip, working in the frequency band of 31-36GHz with a noise figure less than 10 dB.
Design Technique of CMOS Mixer

LIU Lu,WANG Zhi-hua

DOI: https://doi.org/10.3969/j.issn.1005-9490.2005.03.011

2005-01-01

Abstract:The development of wireless communication offers challenge on frontend circuit of transceiver. Mixer is an important building block in RF frontend to achieve frequency translation. the basic operating principle of CMOS mixer is introduced, the mixer structures in common use are presented, along with theirs virtue and shortcomings. The main design techniques of mixer,authors’ research on linearity analysis of transconductance are also presented, along with a new topology of mixer authors designed.
A Highly Linear Short-Wave Broadband Double-Balanced Mixer

Hongjun Ying,Yu Shi,Qingfu Yang

DOI: https://doi.org/10.1109/icept.2014.6922877

2014-01-01

Abstract:A short-wave broadband mixer with high linearity based on double-balanced structure is presented. The mixer is realized by double-balanced passive COMS FET array and balun technology. The channel-width and the bias-voltage of the FET are adjusted to optimize the mixer's performance. The balun is implemented by radio frequency ferrite transmission line transformer that has low insertion loss over wide bandwidth. The radio frequency (RF) frequency is 1.5~30MHz, the local oscillator frequency (LO) is 71.5~100MHz and the intermediate frequency (IF) is 70MHz. The test results show that the conversion loss is about 6.5 dB, the referred 1-dB compression point (P1dB) is above 12dBm, the LO-IF isolation is above 65dB, the LO-RF isolation is above 70dB and the third order input intercept point (IIP3) is above 45dBm.
Systematic Design of 7‐to‐40‐ghz On‐chip Mixer Based on Optimal Impedance Deviation Coefficient

Yao Li,Xiao-Wei Zhu,Rui-Jia Liu,Ling Tian

DOI: https://doi.org/10.1002/mmce.22144

IF: 1.987

2020-01-01

International Journal of RF and Microwave Computer-Aided Engineering

Abstract:In this article, a 7-GHz to 40-GHz ultra-wideband passive double-balanced mixer MMIC using compact wideband Marchand balun (CWMB) is presented. The CWMB is analyzed and designed by introducing a novel optimal impedance deviation coefficient. A trade-off between the needed bandwidth and the acceptable insertion loss in an ultra-wideband passive-doubly-balanced mixer design can be made through introducing the optimal impedance deviation coefficient. Finally, to verify the proposed methodology, a compact wideband passive double-balanced mixer monolithic microwave integrated circuit (MMIC) was designed and fabricated using a standard gallium arsenide (GaAs) pHEMT technology according to the process characteristics. Experimental results show that an ultra-wideband mixer MMIC is realized from 7 GHz to 40 GHz (140% fractional bandwidth) with a measured conversion loss between 9.5 dB similar to 12.5 dB (in-band fluctuation less than 3 dB) and a LO-to-RF isolation larger than 34 dB. The measurement results are in good agreement with the simulation results.
Design of Radar Single-Balance Mixer for Intelligent Transportation

Chen Xu,Xu Feng,Huang Ru,Wang Xin'an

DOI: https://doi.org/10.1109/icmmt.2012.6230422

2012-01-01

Abstract:This paper introduces a 12GHz single-balance mixer applied to automotive collision warning radar based on rat-race structure. The simulated results show that Mixer has 8dB conversion loss as local oscillator input 7dBm power in the 12.1GHz, VSWR of RF port is less than 2, and the isolation of LO-IF and RF-IF are more than 30dB respectively. It will satisfy the requirements of application.
Design of W-Band Wide Intermediate Frequency Fundamental Mixer Based on Finline

Yuanbo Wen,Bo Zhang,Zhongqian Niu,Xi Fang,Lei Wang

DOI: https://doi.org/10.1109/APCAP59480.2023.10469968

2023-01-01

Abstract:This paper presents a wideband intermediate frequency (IF) mixer based on finline in the W-band. The mixer adopts a local oscillator (LO) anti-parallel configuration. The LO signal is input through a waveguide-to-microstrip probe transition, while the RF signal is input through a waveguide-to-single-sided symmetrical finline transition. The two mixing diodes are anti-parallel connected between the finline and microstrip line. By utilizing the orthogonal electric field characteristics between the finline and microstrip line, as well as the high-pass characteristic of the LO waveguide, the need for RF and LO filtering at the input ports is eliminated, reducing circuit length. The mixer incorporates a suspended microstrip line dual-sided coupling structure as the connecting line in the LO-IF duplex structure, eliminating the transmission nulls in the IF passband and increasing the bandwidth of the IF signal transmission. Simulation results demonstrate that the conversion loss of the mixer in the 65-110 GHz is within the range of 5 dB to 7.6 dB, and the IF signal can reach up to 40 GHz.
Double-Balanced Graphene Integrated Mixer with Outstanding Linearity.

Hongming Lyu,Huaqiang Wu,Jinbiao Liu,Qi Lu,Jinyu Zhang,Xiaoming Wu,Junfeng Li,Teng Ma,Jiebin Niu,Wencai Ren,Huiming Cheng,Zhiping Yu,He Qian

DOI: https://doi.org/10.1021/acs.nanolett.5b02503

IF: 10.8

2015-01-01

Nano Letters

Abstract:A monolithic double-balanced graphene mixer integrated circuit (IC) has been successfully designed and fabricated. The IC adopted the cross-coupled resistive mixer topology, integrating four 500 nm-gate-length graphene field-effect transistors (GFETs), four on-chip inductors, and four on-chip capacitors. Passive-first-active-last fabrication flow was developed on 200 mm CMOS wafers. CMOS back-end-of-line processes were utilized to realize most fabrication steps followed by GFET-customized processes. Test results show excellent output spectrum purity with suppressed radio frequency (RF) and local oscillation (LO) signals feedthroughs, and third-order input intercept (IIP3) reaches as high as 21 dBm. The results are compared with a fabricated single-GEFT mixer, which generates IIP3 of 16.5 dBm. Stand-alone 500 nm-gate-length GFETs feature cutoff frequency 22 GHz and maximum oscillation frequency 20.7 GHz RF performance. The double-balanced mixer IC operated with off-chip baluns realizing a print-circuit-board level electronic system. It demonstrates graphene's potential to compete with other semiconductor technologies in RF front-end applications.
A Ka-Band High IF Frequency 4th Harmonic Mixer

LIANG Liang,XU Jun,XUE Liang-Jin

DOI: https://doi.org/10.3969/j.issn.1001-0548.2005.04.009

2005-01-01

Abstract:This paper gives the particular description of a theoretical analysis and practical design for high IF frequency millimeter-wave subharmonic mixer with three one-dimensional photonic bandgap (PEG) cells. Base on computer aided design, a Ka-band 4th harmonic mixer has been designed and tested. When IF frequency is 3 GHz, and RF frequency varied from 34-35.8 GHz, the conversion loss is less than 14.5 dB and the least is 11 dB. The results of simulation and test show that the formulas are correct and the scheme is practicable.
A 15-27 Ghz Low Conversion Loss And High Isolation Resistive Ring Mixer For Direct Conversion Receiver

Pengxue Liu,Tianjun Wu,Zhilin Chen,Yiming Yu,Chenxi Zhao,Huihua Liu,Yunqiu Wu,Kai Kang

DOI: https://doi.org/10.1109/ICMMT45702.2019.8992859

2019-01-01

Abstract:In this paper, a passive resistive ring mixer is demonstrated in a commercial 65-nm process. This mixer achieves a low conversion loss with a low Local Oscillator (LO) power and a high isolation between LO and RF ports. The gate terminals of core devices are biased at subthreshold voltage to improve the conversion loss. The mixer offers a conversion loss of 2.2-5.2 dB over 15-27 GHz when the LO power is 2.7 dBm. Meanwhile, a symmetrical layout helps to achieve the high LO-to-RF isolation which is larger than 47 dB in whole operating frequency range. When RF signal is at 24.01 GHz and IF signal is at 10 MHz, the measured input 1dB compression (IP(1)dB) is up to 3 dBm. Owe to the structure of the passive mixer, zero dc consumption is achieved. The double sideband (DSB) noise figure (NF) is 4.7 dB at IF frequency of 10 MHz.
A Wideband Mixer Designed with Low Conversion Loss Through the Entire W-Band

Xiao Fan Yang,Xian Qi Lin,Jun Ye Jin,Yuan Jiang

DOI: https://doi.org/10.1080/09205071.2014.1002632

2015-01-01

Journal of Electromagnetic Waves and Applications

Abstract:In this paper, a mixer is designed with low conversion loss through the entire W-band. A novel low pass filter is proposed and used to select the intermediate frequency signal with large rejection of the local oscillator (LO) and radio frequency (RF) signals. A single slot is added on the LO passage to achieve impedance matching in a narrow frequency band, while two slots and one metal strip are added on the RF passage to achieve impedance matching in a wide frequency band. The detailed design process is presented, where a more accurate full-wave simulation model of the adopted diode is suggested. Difference in performances can be obtained by changing the key sizes of the matching structures. One sample is fabricated, and the measured conversion loss is less than 9.5dB through the entire W-band (from 75 to 110GHz) under fixed LO condition. The measured return loss of RF port is between 5 and 13.5dB.
Experimental Study of a Planar-Integrated Dual-Polarization Balanced SIS Mixer

Wenlei Shan,Shohei Ezaki,Keiko Kaneko,Akihira Miyachi,Takafumi Kojima,Yoshinori Uzawa

DOI: https://doi.org/10.1109/tthz.2019.2936995

IF: 3.2

2019-01-01

IEEE Transactions on Terahertz Science and Technology

Abstract:A dual-polarization balanced superconductor-insulator-superconductor mixer operating at 2 mm wavelength is realized in form of a monolithic planar integrated circuit. Planar orthomode transducers and LO couplers are enabled by using silicon membranes that are locally formed on the silicon-on-insulator substrate. The performance of the balanced mixer is experimentally investigated. Over the entire RF band (125-163 GHz), the balanced mixer shows an LO noise rejection ratio about 15 dB, an overall receiver noise about 40 K, and a cross-polarization <-20 dB. The demonstrated compactness and the performance of the integrated circuit indicate that this approach is feasible in developing heterodyne focal plane arrays.
A Transformer-Based Up-Conversion Mixer with Wide IF Bandwidth for Multi-Beam 5G New Radio

Runyu Liu,Zijian Ouyang,Yiming Yu,Wenbo Tian,Zhilin Chen,Chenxi Zhao,Huihua Liu,Yunqiu Wu,Kai Kang

DOI: https://doi.org/10.1109/imws-amp54652.2022.10106882

2022-01-01

Abstract:This letter presents a wideband millimeter-wave (mm-Wave) up-conversion mixer with high linearity for multibeam 5G new radio. It consists of a double-balanced switch stage designed by a ring topology and a separated gain stage realized by the common-source (CS) structure with cross-coupled capacitors. To improve the linearity of the circuit, the passive switch stage is placed before the gain stage. Transformer-based high-order matching networks for the mixer are also developed to broaden the RF, LO, and IF terminals’ impedance matching. The measured results show the mixer achieves an output 1-dB compression point (OP1dB) of 2.48 dBm with a conversion gain of 2.5 dB. Thanks to the transformer-based matching networks, the fractional matching bandwidths of IF, LO, and RF are up to 88%, 47.6%, and 26.4%, respectively.
Development for Millimeter-Wave PHEMT Mixer

Ruimin Xu,Shaoqiu Xiao,Baixing Yan

DOI: https://doi.org/10.1109/icimw.2000.893104

2000-01-01

Abstract:The analysis and optimizing design for PHEMT drain mixer circuit in Ka-band is given in this paper. The nonlinear equivalent circuit and its parameters are simulated and obtained from the small signal S-parameter and the DC measurements of the PHEMT device. The drain mixer circuit is designed with optimization, making use of the harmonic balance method and the conversion matrices method. The result shows that the mixer has conversion gain 4 dB at RF 27.4 GHz and LO 33.4 GHz/10 dBm.

Experiment on the New Structure of 8 Mm Integrated Balance Mixer

A group-selected and gain controllable CMOS active mixer for UWB applications

Design and Analysis of an Ultrawide-Band Distributed Drain-Pumped Mixer Using 0.18µm CMOS Technology

MMIC on-Wafer Test Method Based on Hybrid Balanced and Unbalanced RF Pad Structures

A 27 - 57 GHz Down-conversion Mixer with Bulk Injection Technique

Design and Fabrication of a TR Microsystem in Ka Band with Si-Based 3D Heterogeneous Integration

PLANAR W-BAND MIXER WITH A NOVEL IF-BLOCK

Design and Implementation of a Millimeter Wave Monolithic Integrated Mixer

Millimeterwave Monolithic Integrated Mixer

Design Technique of CMOS Mixer

A Highly Linear Short-Wave Broadband Double-Balanced Mixer

Systematic Design of 7‐to‐40‐ghz On‐chip Mixer Based on Optimal Impedance Deviation Coefficient

Design of Radar Single-Balance Mixer for Intelligent Transportation

Design of W-Band Wide Intermediate Frequency Fundamental Mixer Based on Finline

Double-Balanced Graphene Integrated Mixer with Outstanding Linearity.

A Ka-Band High IF Frequency 4th Harmonic Mixer

A 15-27 Ghz Low Conversion Loss And High Isolation Resistive Ring Mixer For Direct Conversion Receiver

A Wideband Mixer Designed with Low Conversion Loss Through the Entire W-Band

Experimental Study of a Planar-Integrated Dual-Polarization Balanced SIS Mixer

A Transformer-Based Up-Conversion Mixer with Wide IF Bandwidth for Multi-Beam 5G New Radio

Development for Millimeter-Wave PHEMT Mixer