Nanosecond-Pulsed, Dual-Wavelength Passively Q-Switched C-Cut Nd:YVO<inline-formula><tex-math>$_{\bf 4}$ ≪/tex-Math></inline-formula> Laser Using a Few-Layer Bi<inline-formula><tex-math>$_{\bf 2}$≪/tex-Math></inline-formula> Se<inline-formula><tex-math>$_{\bf 3}$≪/tex-Math></inline-formula>saturable Absorber

Fei Jia,Hao Chen,Pei Liu,You Huang,Zhengqian Luo

DOI: https://doi.org/10.1109/jstqe.2014.2346612

IF: 4.9

2015-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:We demonstrate for the first time, to the best of our knowledge, a dual-wavelength nanosecond-pulsed Nd:YVO 4 laser passively Q-switched by a topological-insulator (TI) Bi 2 Se 3 saturable absorber (SA). The few-layer Bi 2 Se 3 nanosheets are fabricated by the liquid-phase exfoliation technique, and are then coated on the output mirror of a diode-pumped c-cut Nd:YVO 4 laser. The synchronized Q-switching operation at 1066.6 and 1066.8 nm is successfully achieved. The Q-switched repetition rate is tunable in a wide range of 1-135 kHz, and the maximum pulse energy is obtained to be 0.56 μJ (corresponding to the peak power of 1.87 W). The obtained pulse width can be as narrow as 250 ns, which is the shortest one from the reported TI-based Q-switched lasers.