Exchange Coupling of Ferromagnetic Films Across Metallic and Semiconducting Interlayers

Daniel E. Bürgler,M. Büchmeier,S. Cramm,Stefan Eisebitt,Р. Р. Гареев,P Gr nberg,Chun‐Lin Jia,L. L. Pohlmann,R. Schreiber,M. Siegel,Yongliang Qin,Anna Zimina
DOI: https://doi.org/10.1088/0953-8984/15/5/301
2003-01-01
Journal of Physics Condensed Matter
Abstract:Recent results obtained in our laboratories on interlayer exchange coupling of Fe films across interlayers of iron silicides, Fe1−xSix with x = 0.5– 1, are reviewed. Samples are prepared by molecular beam epitaxy and characterized by means of low-energy electron diffraction and cross-sectional transmission electron microscopy. Coupling across interlayers of iron silicide with x ≈ 0.5 is found to be oscillatory with a strength of the order of 1 mJ m−2, and across well ordered Si interlayers (nominally x = 1) the coupling is exponentially decaying. In the latter case the maximum coupling turns out to be surprisingly strong (> 6 mJ m−2), in particular considering the fact that the electrical resistivity is found to be large. Current–voltage curves for currents across the interlayers are characteristic of electron tunnelling. Soft-x-ray emission and near-edge x-ray absorption spectroscopy further support a semiconducting nature for the nominally pure Si interlayers.
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