Abstract:BiTeCl is a topological insulator with strong inversion asymmetry, which exhibits bulk charge polarization and pyroelectricity. Such a long-sought topological insulator paves the way for applications involving natural p–n junctions and spintronics. In the past few years, a new state of quantum matter known as the time-reversal-invariant topological insulator has been predicted theoretically and realized experimentally. All of the topological insulators discovered so far in experiment are inversion symmetric1,2,3,4,5—except for strained HgTe, which has weak inversion asymmetry, a small bulk gap but no bulk charge polarization6. Strong inversion asymmetry in topological insulators would not only lead to many interesting phenomena, such as crystalline-surface-dependent topological electronic states, pyroelectricity and intrinsic topological p–n junctions, but would also serve as an ideal platform for the realization of topological magneto-electric effects7,8, which result from the modification of Maxwell equations in topological insulators. Here we report the discovery of a strong inversion asymmetric topological insulator phase in BiTeCl by angle-resolved photoemission spectroscopy, which reveals Dirac surface states and crystalline-surface-dependent electronic structures. Moreover, we observe a tenfold increase of the bulk energy gap in BiTeCl over the weak inversion asymmetric topological insulator HgTe, making it a promising platform for topological phenomena and possible applications at high temperature.

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Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

A robust weak topological insulator in a bismuth halide Bi4Br2I2

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Topological Edge States and Electronic Structures of A 2d Topological Insulator: Single-Bilayer Bi (111)

Scanning tunneling microscopy study of the possible topological surface states in BiTeCl

Study of the Surface and Bulk States of Bi2Te3 Topological Insulators Using Terahertz Time-Domain Spectroscopy

Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators.