A robust weak topological insulator in a bismuth halide Bi4Br2I2

Ryo Noguchi,Masaru Kobayashi,Kaishu Kawaguchi,Chun Lin,Hiroaki Tanaka,Kenta Kuroda,Ayumi Harasawa,Viktor Kandyba,Mattia Cattelan,Alexei Barinov,Makoto Hashimoto,Donghui Lu,Takao Sasagawa,Takeshi Kondo
DOI: https://doi.org/10.48550/arXiv.2301.07158
2023-01-17
Materials Science
Abstract:We apply a topological material design concept for selecting a bulk topology of 3D crystals by different van-der-Waals stacking of 2D topological insulator layers, and find a bismuth halide Bi4Br2I2 to be an ideal weak topological insulator (WTI) with the largest band gap (~230 meV) among all the WTI candidates, by means of angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT) calculations, and resistivity measurements. Our results vastly expand future opportunities for fundamental research and device applications with a robust WTI.
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