Nontrivial gapless electronic states at the stacking faults of weak topological insulators

Gabriele Naselli,Viktor Könye,Sanjib Kumar Das,G. G. N. Angilella,Anna Isaeva,Jeroen van den Brink,Cosma Fulga

DOI: https://doi.org/10.1103/PhysRevB.106.094105

2022-06-14

Abstract:Lattice defects such as stacking faults may obscure electronic topological features of real materials. In fact, defects are a source of disorder that can enhance the density of states and conductivity of the bulk of the system and they break crystal symmetries that can protect the topological states. On the other hand, in recent years it has been shown that lattice defects can act as a source of nontrivial topology. Motivated by recent experiments on three-dimensional (3D) topological systems such as Bi$_2$TeI and Bi$_{14}$Rh$_3$I$_9$, we examine the effect of stacking faults on the electronic properties of weak topological insulators (WTIs). Working with a simple model consisting of a 3D WTI formed by weakly-coupled two-dimensional (2D) topological layers separated by trivial spacers, we find that 2D stacking faults can carry their own, topologically nontrivial gapless states. Depending on the WTI properties, as well as the way in which the stacking fault is realized, the latter can form a topologically protected 2D semimetal, but also a 2D topological insulator which is embedded in the higher-dimensional WTI bulk. This suggests the possibility of using stacking faults in real materials as a source of topologically nontrivial, symmetry-protected conducting states.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the influence of stacking faults on the electronic properties of weak topological insulators (WTIs). Specifically, the author focuses on how to use these defects to generate gapless electron states with non - trivial topological properties. In three - dimensional (3D) weak topological insulators, stacking faults can carry their own topologically non - trivial gapless states, which depend on the properties of the WTI and the specific implementation of the stacking faults. These states can form protected two - dimensional (2D) semimetals or 2D topological insulators in the higher - dimensional WTI bulk phase, thus providing the possibility of using stacking faults in materials as a source for generating topologically non - trivial, symmetry - protected conductive states. The paper studies this problem by constructing a simple model composed of weakly coupled two - dimensional (2D) topological layers, which are separated by trivial spacer layers. It is found that 2D stacking faults can carry their own topologically non - trivial gapless states. According to the properties of the WTI and the implementation of the stacking faults, these states can form protected 2D semimetals or 2D topological insulators embedded in the high - dimensional WTI bulk phase. This finding is of great significance for understanding how defects in topological insulators affect their topological properties and how to use these defects to design new functional materials.

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