Abstract:The performance and robustness of millimeter-wave (mm-wave) power amplifiers (PAs) define the quality of a high-data-rate communication system to a large extent [1]. However, the performance of the PAs is strongly affected by mutual coupling among the close element in the phased-array antenna, yielding a beam-steering angle-dependent and time-varying loading or VSWR condition rather than ideal $50\Omega$ as shown in Fig. 1 (top). Furthermore, mm-wave communication systems typically demand PAs with high output power and power-added efficiency (PAE), worsening the output reflection coefficient $(\Gamma_{\mathrm{P}\mathrm{A}})[2-7]$ . Therefore, the unwanted “element to element” coupled signals reflect back to the antenna, deteriorating the phased array beam pattern and the linearity of PAs. Recently, a method of tuning the output matching network (self-healing) based on load mismatch detection has been proposed to deal with this problem [8]. However, this method requires a reconfigurable and inevitably lossy output matching network, which will degrade the performance of PAs. Besides, the design of PA with high output power and efficiency meets many challenges as the operating frequency moves into the mm-wave range mainly due to breakdown issues when high voltages are handled, especially in modern downscaled CMOS technologies. In addition, the increased routing parasitic when increasing the device size results in higher loss and makes the design of matching networks more difficult due to a high impedance transformation ratio.

A Ka-Band Mutual Coupling Resilient Balanced PA with Magnetic Coupling Self-Cancelling Inductor Achieving 21.2dbm OP1dBand 27.6% PAE1dB

A Ka-band 8-Element 4-Beam Transmitter Front End with Hybrid VGA and Symmetrical Transformer-based Doherty PA

Design and Analysis of a 26–34.5-Ghz Power Amplifier with Balanced Mismatch Reduction and Interstage Matching

A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS

A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier with 21.2 Dbm OP1dB and 27.6% PAE1dB in 45-Nm CMOS SOI

A 22.8 GHz to 32.8 GHz Compact Power Amplifier with a 15 Dbm Output P1dB and 36.5% Peak PAE in 65-Nm CMOS.

A Compact E-Band Load-Modulation Balanced Power Amplifier Using Coupled Transmission-Line Output Network Achieving 22.1-Dbm Psat and 34.9%/12.2% Efficiency at Psat/6-dB PBO

A Full Ka-Band Power Amplifier with 32.9% PAE and 15.3-Dbm Power in 65-Nm CMOS

A Compact 19.7-to 43.8-Ghz Power Amplifier with 20.3-Dbm $p_{\mathrm{sat}}$ and 35.5% PAE in 28-Nm Bulk CMOS

A 9.5-18.5 Ghz Power Amplifier For Multi-Band Microwave Point-To-Point Backhaul Communication

A 9.5&#x2013;18.5 GHz Power Amplifier for Multi-Band Microwave Point-to-point Backhaul Communication

A Compact E-Band PA with 22.37% PAE 14.29 Dbm Output Power and 26 Db Power Gain with Efficiency Enhancement at Power Back-off

A K-/Ka-Band 21.4 Dbm Power Amplifier With Four-Way Twisted Combiner In 0.13 Mu M Sige Bicmos

A 60-Ghz CMOS Balanced Power Amplifier with Miniaturized Quadrature Hybrids Achieving 19.0-Dbm Output Power and 24.4% Peak PAE

32.4 A 67.8-to-108.2ghz Power Amplifier with a Three-Coupled-Line-Based Complementary-Gain-Boosting Technique Achieving 442ghz GBW and 23.1% Peak PAE

A Millimeter-Wave High Power Combining Circuit Based On A Waveguide-Based Lossless Symmetric 180 Degrees 3-Db Hybrid

A 6.5-Mm2 10.5–To-15.5–Ghz Differential GaN PA with Coupled-Line-Based Matching Networks Achieving 10-W Peak Psat and 42% PAE

A Compact W-Band Power Amplifier with a Peak PAE of 21.1% in 65-Nm CMOS Technology

A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm P sat and 26.5% PAE in 16-nm FinFET CMOS

A millimeter-wave high power combining circuit based on a waveguide-based lossless symmetric 180°3-dB hybrid

A Ka-Band 23dbm Power Amplifier Based On 4-Way Parallel-Series Power Combiner With Loaded Capacitors In 65-Nm Cmos