Abstract:Integrated Circuit (IC) technologies have begun transitioning to wide band gap (WBG) substrates (i.e., Silicon carbide (SiC)) due to the intrinsic properties (i.e., high capacitance, thermal stability, and wear resistance) of these semiconducting materials. This has led to the development of Chemical Mechanical Planarization (CMP) processes that use aggressive chemical conditions and increasing mechanical forces to reach optimal material removal rates (MRR). The harsh CMP process parameters often result in contamination/defectivity (i.e., organic residue, abrasive particles, etc.) left on post-polish substrate surfaces and thus posing difficulty within the post-CMP cleaning process. Traditionally, post-CMP cleaning utilizes a polyvinyl alcohol (PVA) brush scrubbing method on the substrate surface. This has been shown to cause secondary defects (i.e., scratches, particle agglomerations, etc.) that inevitably lead to overall device failure. Alternative post-CMP methods utilize non-contact cleaning via megasonic energy to target removing defects (i.e., organic residue, pad debris, particle agglomerations, etc.) and avoid secondary defect generation. This research surveys post-CMP cleaning processes (contact and non-contact) on SiC substrates with various cleaning chemistries (i.e., supramolecular surfactants, catalytic complexes for generating reactive oxygen species (ROS), non-metal catalyst). Initial results show that supramolecular surfactants can produce high particle removal efficiency (PRE) due to their ability to be broken down into their monomeric units and encapsulate any removed residue under both brush and megasonic conditions Additionally, increased ROS generation disrupts the non-covalently adsorbed defects to the SiC surface and leads to an increased cleaning efficiency while decreasing the overall variability of particle removal results. Combining the ROS systems' disruptive power with surfactants' encapsulation mode, a highly efficient clean with low variability can be achieved under low-stress conditions.

Environment-friendly Chemical Mechanical Polishing Using NaHCO3-activated H2O2 Slurry for Highly Efficient Finishing of 4H-Sic (0001) Surface

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Improved Chemical Mechanical Polishing Performance in 4H-Sic Substrate by Combining Novel Mixed Abrasive Slurry and Photocatalytic Effect

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Atomic Surface of Silicon Wafers Induced by Grafted Silica Nanoparticles and Sodium Carbonate

Influences of Nonaqueous Slurry Components on Polishing 4H-Sic Substrate with a Fixed Abrasive Pad

High Efficiency Chemical Mechanical Polishing for Silicon Wafers Using a Developed Slurry

Chemical Mechanical Polishing for Monocrystal SiC Assisted by the Heterogeneous Sono-Fenton Oxidation

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Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads

Piezocatalysis for Chemical–Mechanical Polishing of SiC: Dual Roles of t‐BaTiO3 as a Piezocatalyst and an Abrasive

Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

Picosecond Laser-Assisted Chemical Mechanical Polishing (CMP): Aiming at the Si-Face of Single-Crystal 6H-Sic Wafer

Unprecedented atomic surface of silicon induced by environmentally friendly chemical mechanical polishing

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Electro-Chemical Mechanical Polishing of 4H-SiC for Scratch-Free Surfaces with Less Oxide Layer at High Efficiency

Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive

Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis

Survey of Activated Cleaning Chemistries for Low-Stress Post-Chemical Mechanical Planarization Cleaning of Silicon Carbide