Abstract:Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sites are occupied by the same atomic species, electrical current can generate local spin polarization with the same magnitude and opposite sign on the two inversion-partner sites. In CuMnAs, which shares this specific crystal symmetry of the Si lattice, the effect led to the demonstration of electrical switching in an antiferromagnetic memory at room temperature. When the inversion-partner sites are occupied by different atoms, a non-zero global spin-polarization is generated by the applied current which can switch a ferromagnet, as reported at low temperatures in the diluted magnetic semiconductor (Ga,Mn)As. Here we demonstrate the effect of the global current-induced spin polarization in a counterpart crystal-symmetry material NiMnSb which is a member of the broad family of magnetic Heusler compounds. It is an ordered high-temperature ferromagnetic metal whose other favorable characteristics include high spin-polarization and low damping of magnetization dynamics. Our experiments are performed on strained single-crystal epilayers of NiMnSb grown on InGaAs. By performing all-electrical ferromagnetic resonance measurements in microbars patterned along different crystal axes we detect room-temperature spin-orbit torques generated by effective fields of the Dresselhaus symmetry. The measured magnitude and symmetry of the current-induced torques are consistent with our relativistic density-functional theory calculations.

Giant room-temperature spin-orbit torque in a bismuthate superconductor

Large Spin–orbit Torque in Bismuthate-Based Heterostructures

Magnetization Switching Through Giant Spin–orbit Torque in a Magnetically Doped Topological Insulator Heterostructure

Giant spin Hall effect with multi-directional spin components in Ni4W

Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure

Magnetization Switching Induced by Electron- and Magnon-Mediated Spin Torque in Topological Insulator Devices (conference Presentation)

Room temperature spin-orbit torque switching induced by a topological insulator

Implementing Complex Oxides for Efficient Room‐Temperature Spin–Orbit Torque Switching

Room Temperature Magnetization Switching in Topological Insulator-Ferromagnet Heterostructures by Spin-Orbit Torques

Room-temperature spin-orbit torque in NiMnSb

Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators

Coexistence of non-trivial van der Waals magnetic orders enable field-free spin-orbit torque switching at room temperature

Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers

Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet

Unconventional Spin Currents Generated by the Spin-Orbit Precession Effect in Perpendicularly Magnetized Co−Tb Ferrimagnetic System

Current-induced magnetization switching using electrically-insulating spin-torque generator

Perpendicular Magnetization Switching by Large Spin-Orbit Torques from Sputtered Bi2Te3

Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator

Energy-efficient field-free unconventional spin-orbit torque magnetization switching dynamics in van der Waals heterostructures

Highly Efficient Room‐Temperature Spin‐Orbit‐Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet

Large Spin Hall Effect of Perpendicularly Magnetized Β-W/cofeb/mgo Layers with High Thermal Stability