Abstract:Solution processed metal oxide thin-film transistors (MO-TFTs) have gained momentum in recent years and opened new horizons for their extended applications in thin-film optoelectronics. Unfortunately, the relatively high processing temperature has become the main limitation for their commercial application in flexible electronics. In this work, ultrashort femtosecond (fs) laser pulses were used for the annealing of printed InGaZnO TFT arrays with low temperature and fast processing. The high transient intensity and negligible heat-affected zone is beneficial to the effective conversion of precursor to metal-oxide lattices, which was also verified by the x-ray photoelectron spectroscopy analysis. Moreover, for the first time, based on optical engineering method, dielectric mirrors (DMs) is proposed to realize reflection of photon irradiation and protect the underlying polymer substrate. TFTs on polyethylene naphthalate (PEN) substrate with polymer insulator exhibited a mobility of 4.24 cm2 V−1 s−1, along with good mechanical stability. The mechanism of DMs for the improvement of the device performance was systematically investigated based on laser-matter interaction, optical structure and photon transport. DMs can reduce laser-induced pressure and variation of dielectric properties in PEN substrate resulting from the impact ionization due to a strong nonlinear multi-photon absorption. Our work clearly demonstrated that flexible MO-TFTs can be simply fabricated with fs-laser annealing. More importantly, this novel method is applicable for a wide range of MO and polymer substrates, by solving the incompatibility of solution processed MO and polymer substrates due to high processing temperature. Therefore, the proposed method showed tremendous potential to be applicable in flexible electronics such as sensors, display and circuits.

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