Atomic-level Chemical Reaction Promoting External Quantum Efficiency of Organic Photodetector Exceeding 10^8% for Weak-Light Detection

Linlin Shi,Yizhi Zhu,Guohui Li,Ting Ji,Wenyan Wang,Ye Zhang,Yukun Wu,Yuying Hao,Kaiying Wang,Fujun Zhang,Jun Yuan,Yingping Zou,Beng S. Ong,Furong Zhu,Yanxia Cui
DOI: https://doi.org/10.21203/rs.3.rs-2201972/v1
2022-01-01
Abstract:Low-cost, solution-processed photomultiplication organic photodetectors (PM-OPDs) with external quantum efficiency (EQE) above unity have attracted enormous attention. However, their weak-light detection is unpleasant because the anode Ohmic contact causes exacerbation in dark current. Here, we introduce atomic-level chemical reaction in PM-OPDs which can simultaneously suppress dark current and increase EQE via depositing a 0.8 nm thick Al 2 O 3 by atomic layer deposition. Suppression in dark current mainly originates from the built-in anode Schottky junction as a result of work function decrease of hole-transporting layer of which the chemical groups can react chemically with the bottom surface of Al 2 O 3 layer at the atomic-level. Such strategy of suppressing dark current is not adverse to charge injection under illumination; instead, responsivity enhancement is realized because charge injection can shift from cathode to anode, of which the neighborhood possesses increased photogenerated carriers. Consequently, weak-light detection limit of the Al 2 O 3 treated PM-OPD reaches a remarkable level of 2.5 nW/cm 2 , while that of the control is 25 times inferior. Meanwhile, the PM-OPD yields a record high EQE and responsivity of 4.31×10 8 % and 1.85×10 6 A/W, respectively, outperforming all other polymer-based PM-OPDs.
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