Ultra-narrow Bandgap Electron Acceptor with Low Reorganization Energy and Refined Crystallization Enables Efficient Self-Powered Photodetectors with Spectral Response over 1100 Nm

Wenjing Guo,Yuxin Duan,Wenxu Liu,Xin Zhang,Jiaxin Gao,Zuhao You,Yongkang Jiang,Zaifei Ma,Xiaowei Zhan,Yao Liu

DOI: https://doi.org/10.31635/ccschem.024.202404314

2024-01-01

CCS Chemistry

Abstract:Developing high-performance organic photodetectors (OPDs) with spectral responses over 1000 nm is of paramount importance to fundamental research and practical applications, yet effective approaches to achieve this remain elusive. Herein, we develop ultranarrow bandgap electron acceptors through a theory-guided synergistic modification strategy. The optimal electron acceptor shows absorption over 1100 nm with smaller reorganization energies, more regulated crystallinity with a predominant face-on packing mode, and better miscibility with polymer donors, which affords the resultant OPDs with improved charge dissociation and transport, and favorable active layer morphology. The optimized OPDs have less charge recombination, energetic disorder, and trap density, showing ultralow dark current density ( J d ) of 3.8 x 10 -11 A cm -2 , high shot-noise-limited specific detectivities ( D * s h ) over 10 13 Jones in the range of 320-1100 nm, and an ultrafast response time below 0.3 mu s. Further incorporating a fullerene derivative (PC 71 BM) as the third component suppresses J d to 2.3 x 10 -11 A cm -2 , resulting in prominent D * sh values of over 10 14 Jones spanning from 640 to 1020 nm, with a peak value of 1.4 x 10 14 Jones at 950 nm. This work not only provides cutting-edge performance in near-infrared (NIR) OPDs reported so far but also opens an intriguing materialdriven dimension to achieve sensitive OPDs for vis-to-NIR broadband photodetection.