Spin‐Torque Memristors: Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing (adv. Sci. 10/2021)

Xueying Zhang,Wenlong Cai,Mengxing Wang,Bojun Cheng,Kaihua Cao,Maosen Guo,Tianrui Zhang,Houyi Cheng,Shaoxin Li,Daoqian Zhu,Lin Wang,Fazhan Shi,Jiangfeng Du,Weisheng Zhao
DOI: https://doi.org/10.1002/advs.202170056
IF: 15.1
2021-01-01
Advanced Science
Abstract:In article number 2004645, Weisheng Zhao and co-workers develop a nano-scale memristor device based on magnetic tunneling junction. A kind of chiral vortex spin texture plays a key role in forming the multi-level magnetoresistance. Thanks to its advantages such as long endurance and high speed, this spintronic device may take neuromorphic computing one step further.
What problem does this paper attempt to address?