Current Status and Prospects of Memristors Based on Novel 2D Materials

Qianlong Zhao,Zhongjian Xie,Ya-Pei Peng,Kaiyang Wang,Huide Wang,Xiangnan Li,Hongwei Wang,Jingsheng Chen,Han Zhang,Xiaobing Yan

DOI: https://doi.org/10.1039/c9mh02033k

IF: 13.3

2020-01-01

Materials Horizons

Abstract:A summary of the characteristics and switching mechanisms of memristors based on novel 2D materials.

What problem does this paper attempt to address?

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Xiangyu Zeng,Liang Zhang,Jiaqi Peng,Qikai Ye,Boyang Ma,Hongsheng Xu,Yulu Liu,Nazifi Sani Shuaibu,Xiaozhi Wang,Yixiu Wang,Yan Liu,Yue Hao,Genquan Han

DOI: https://doi.org/10.1063/5.0170984

IF: 4

2023-01-01

Applied Physics Letters

Abstract:Emerging intelligence applications, such as brain-inspired and in-memory computing, require memory with faster read/write speeds, higher integration, and lower energy consumption. To tackle these challenges, memristors, a type of synaptic device, are considered ideal candidates due to their potential for emulating biological synaptic connections. In this study, a two-dimensional (2D) heterostructure of tellurene/Nb-doped MoS2 (MoS2:Nb) was used as the resistive switching layer to fabricate memristors. By varying the maximum working voltage, the fabricated device can switch between one and two-memory windows, which can be used to imitate the postsynaptic inhibition effect. This is attributed to the competition between the drift and diffusion of the S vacancy in the MoS2:Nb layer, which can modulate the contact Schottky barrier in the material interfaces. Furthermore, biological synapse effects, such as long-term depression and long-term potentiation, can be well mimicked by applying several voltage pulses to the device with good repeatability. This study advances the device physics for understanding the physical working mechanism of the 2D memristor, which can benefit the realization of bio-realistic neuromorphic computing systems based on such memristors.
Two-Dimensional Materials Based Memtransistors: Integration Strategies, Switching Mechanisms and Advanced Characterizations

Wen Deng,Xin Yan,Lisheng Wang,Niannian Yu,Wen Luo,Liqiang Mai

DOI: https://doi.org/10.1016/j.nanoen.2024.109861

IF: 17.6

2024-01-01

Nano Energy

Abstract:Two-dimensional (2D) materials-based memtransistors offer a wide range of programmable memory characteristics, high energy efficiency, rapid response, high integration density, and flexible expandability, which have led to significant potential in the field of novel artificial intelligence applications, such as brain-inspired neural computing and the integration of artificial multi-sensory neurons. A clear understanding of the switching mechanism forms the foundation for the advancement and application of memristors. While traditional vertical structure memristors have well-established switching mechanisms, research on the switching mechanisms of 2D material-based memtransistors has only emerged in recent years. In this paper, the concept and background of memtransistors are outlined by describing the material synthesis strategy and device structure. The latest research progress on switching mechanisms associated with memtransistors, including valence change mechanism, charge trapping/detrapping, phase change, and ferroelectric resistance switching have been highlighted. More importantly, the application of advanced electron microscopy, spectroscopy, and simulation calculations to explore the intrinsic links between switching mechanisms and the inherent physicochemical properties, intrinsic defects, and or interfacial doping defects of 2D materials are throughout emphasized. Finally, the new research hotspots for novel applications of 2D material memtransistors are briefly introduced as well and the prospects for future research are proposed.
Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications

Kanghong Liao,Peixian Lei,Meilin Tu,Songwen Luo,Ting Jiang,Wenjing Jie,Jianhua Hao

DOI: https://doi.org/10.1021/acsami.1c07665

2021-07-12

Abstract:A memristor is a two-terminal device with nonvolatile resistive switching (RS) behaviors. Recently, memristors have been highly desirable for both fundamental research and technological applications because of their great potential in the development of high-density memory technology and neuromorphic computing. Benefiting from the unique two-dimensional (2D) layered structure and outstanding properties, 2D materials have proven to be good candidates for use in gate-tunable, highly reliable, heterojunction-compatible, and low-power memristive devices. More intriguing, stable and reliable nonvolatile RS behaviors can be achieved in multi- and even monolayer 2D materials, which seems unlikely to be achieved in traditional oxides with thicknesses less than a few nanometers because of the leakage currents. Moreover, such two-terminal devices show a series of synaptic functionalities, suggesting applications in simulating a biological synapse in the neural network. In this review article, we summarize the recent progress in memristors based on inorganic and organic 2D materials, from the material synthesis, device structure and fabrication, and physical mechanism to some versatile memristors based on diverse 2D materials with good RS properties and memristor-based synaptic applications. The development prospects and challenges at the current stage are then highlighted, which is expected to inspire further advancements and new insights into the fields of information storage and neuromorphic computing.This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Novel 2D MXene-based materials in memristors: fundamentals, resistive switching properties and applications

Lin Lv,Puyi Zhang,Xu Yang,Houzhao Wan,Guokun Ma,Hao Wang

DOI: https://doi.org/10.1016/j.surfin.2023.103678

IF: 6.2

2023-11-30

Surfaces and Interfaces

Abstract:As the fourth kind of passive device, memristors possess the advantages of non-volatile storage, high performance, low power consumption, fast switching speed and many other storage characteristics, making it one of the most potential new biomimetic electronic synaptic devices and be able to provide the possibility of data storage for high-throughput brain-like computing. Novel two-dimensional (2D) layered MXene materials have attracted extensive attention and research because of their advantages such as large size of lamellas, high ion mobility, good electrical conductivity, high mechanical toughness, tunable electronic properties and surface characteristics. In this article, the latest research progress in synthesis of MXene materials, structure design of MXene-based resistance layer, device performance optimization, resistive switching mechanism and data storage applications based on MXene is well reviewed. The effects of elaborated material structure and device structure based on MXene on the resistance performance of the memristor are carefully discussed in detail. Finally, the research gap of MXene-based memristor and the urgent demand to deeply explore its resistive switching mechanism are amply described, keenly expecting that the research of MXene-based storage devices can develop rapidly and integrate with other device characteristics and meet the actual requirements of information storage in the near future.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Recent advances in memristors based on two-dimensional ferroelectric materials

Wenbiao Niu,Guanglong Ding,Ziqi Jia,Xin-Qi Ma,JiYu Zhao,Kui Zhou,Su-Ting Han,Chi-Ching Kuo,Ye Zhou

DOI: https://doi.org/10.1007/s11467-023-1329-8

2023-11-29

Frontiers of Physics

Abstract:In this big data era, the explosive growth of information puts ultra-high demands on the data storage/computing, such as high computing power, low energy consumption, and excellent stability. However, facing this challenge, the traditional von Neumann architecture-based computing system is out of its depth owing to the separated memory and data processing unit architecture. One of the most effective ways to solve this challenge is building brain inspired computing system with in-memory computing and parallel processing ability based on neuromorphic devices. Therefore, there is a research trend toward the memristors, that can be applied to build neuromorphic computing systems due to their large switching ratio, high storage density, low power consumption, and high stability. Two-dimensional (2D) ferroelectric materials, as novel types of functional materials, show great potential in the preparations of memristors because of the atomic scale thickness, high carrier mobility, mechanical flexibility, and thermal stability. 2D ferroelectric materials can realize resistive switching (RS) because of the presence of natural dipoles whose direction can be flipped with the change of the applied electric field thus producing different polarizations, therefore, making them powerful candidates for future data storage and computing. In this review article, we introduce the physical mechanisms, characterizations, and synthetic methods of 2D ferroelectric materials, and then summarize the applications of 2D ferroelectric materials in memristors for memory and synaptic devices. At last, we deliberate the advantages and future challenges of 2D ferroelectric materials in the application of memristors devices.

physics, multidisciplinary
Low-Power Memristor Based on Two-Dimensional Materials

Huan Duan,Siqi Cheng,Ling Qin,Xuelian Zhang,Bingyang Xie,Yang Zhang,Wenjing Jie

DOI: https://doi.org/10.1021/acs.jpclett.2c01962

2022-07-29

Abstract:The memristor is an excellent candidate for nonvolatile memory and neuromorphic computing. Recently, two-dimensional (2D) materials have been developed for use in memristors with high-performance resistive switching characteristics, such as high on/off ratios, low SET/RESET voltages, good retention and endurance, fast switching speed, and low power and energy consumption. Low-power memristors are highly desired for recent fast-speed and energy-efficient artificial neuromorphic networks. This...

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary
Emerging of two-dimensional materials in novel memristor

Zhican Zhou,Fengyou Yang,Shu Wang,Lei Wang,Xiaofeng Wang,Cong Wang,Yong Xie,Qian Liu

DOI: https://doi.org/10.1007/s11467-021-1114-5

2021-09-29

Frontiers of Physics

Abstract:The rapid development of big-data analytics (BDA), internet of things (IoT) and artificial intelligent Technology (AI) demand outstanding electronic devices and systems with faster processing speed, lower power consumption, and smarter computer architecture. Memristor, as a promising Non-Volatile Memory (NVM) device, can effectively mimic biological synapse, and has been widely studied in recent years. The appearance and development of two-dimensional materials (2D material) accelerate and boost the progress of memristor systems owing to a bunch of the particularity of 2D material compared to conventional transition metal oxides (TMOs), therefore, 2D material-based memristors are called as new-generation intelligent memristors. In this review, the memristive (resistive switching) phenomena and the development of new-generation memristors are demonstrated involving graphene (GR), transition-metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) based memristors. Moreover, the related progress of memristive mechanisms is remarked.

physics, multidisciplinary
Electronic and Photoelectronic Memristors Based on 2D Materials

Kai Tang,Yang Wang,Chuanhui Gong,Chujun Yin,Miao Zhang,Xianfu Wang,Jie Xiong

DOI: https://doi.org/10.1002/aelm.202101099

IF: 6.2

2022-01-05

Advanced Electronic Materials

Abstract:Next‐generation memristive devices and neuromorphic computing have many fantastic properties in breaking down the memory walls of conventional von Neumann structures. Electronic and photoelectronic memristors are the most important basic components, equipping with the capability of data storage and information processing for electronic and photoelectronic signals. 2D layered materials exhibit many unique physical advantages such as novel mechanisms, ultrathin channel, high mechanical flexibility, and easy electrical control, and thus demonstrate great potential for memory with high density, fast speed, and low power consumption. In recent years, abundant and fruitful designs have been devoted in terms of 2D memristors. Herein, the recent advances of 2D electronic and photoelectronic memristors are reviewed, as well as the application on simulating artificial brain neural network and visual neural network, respectively. An overview of the challenges and perspectives on the exploitation of 2D materials for memristors is given, and routes to realize practical brain and visual neural network are proposed. Rapid development of 2D memristive devices including electronic and photoelectronic memristors is reviewed detailedly focusing on physical and chemical mechanisms as well as material's modification and structural innovation, with highlight of their application in brain‐like computation and visual neural network.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
A New Memristor with 2D Ti3 C2 Tx MXene Flakes As an Artificial Bio-Synapse.

Xiaobing Yan,Kaiyang Wang,Jianhui Zhao,Zhenyu Zhou,Hong Wang,Jingjuan Wang,Lei Zhang,Xiaoyan Li,Zuoao Xiao,Qianlong Zhao,Yifei Pei,Gong Wang,Cuiya Qin,Hui Li,Jianzhong Lou,Qi Liu,Peng Zhou

DOI: https://doi.org/10.1002/smll.201900107

IF: 13.3

2019-01-01

Small

Abstract:Two-dimensional (2D) materials have attracted extensive research interest in academia due to their excellent electrochemical properties and broad application prospects. Among them, 2D transition metal carbides (Ti3 C2 Tx ) show semiconductor characteristics and are studied widely. However, there are few academic reports on the use of 2D MXene materials as memristors. In this work, reported is a memristor based on MXene Ti3 C2 Tx flakes. After electroforming, Al/Ti3 C2 Tx /Pt devices exhibit repeatable resistive switching (RS) behavior. More interestingly, the resistance of this device can be continuously modulated under the pulse sequence with 10 ns pulse width, and the pulse width of 10 ns is much lower than that in other reported work. Moreover, on the nanosecond scale, the transition from short-term plasticity to long-term plasticity is achieved. These two properties indicate that this device is favorable for ultrafast biological synapse applications and high-efficiency training of neural networks. Through the exploration of the microstructure, Ti vacancies and partial oxidation are proposed as the origins of the physical mechanism of RS behavior. This work reveals that 2D MXene Ti3 C2 Tx flakes have excellent potential for use in memristor devices, which may open the door for more functions and applications.
Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

Woong Huh,Donghun Lee,Chul‐Ho Lee

DOI: https://doi.org/10.1002/adma.202002092

IF: 29.4

2020-09-27

Advanced Materials

Abstract:<p>The memristor, a composite word of memory and resistor, has become one of the most important electronic components for brain‐inspired neuromorphic computing in recent years. This device has the ability to control resistance with multiple states by memorizing the history of previous electrical inputs, enabling it to mimic a biological synapse in the neural network of the human brain. Among many candidates for memristive materials, including metal oxides, organic materials, and low‐dimensional nanomaterials, 2D layered materials have been widely investigated owing to their outstanding physical properties and electrical tunability, low‐power‐switching capability, and hetero‐integration compatibility. Hence, a large number of experimental demonstrations on 2D material‐based memristors have been reported showing their unique memristive characteristics and novel synaptic functionalities, distinct from traditional bulk‐material‐based systems. Herein, an overview of the latest advances in the structures, mechanisms, and memristive characteristics of 2D material‐based memristors is presented. Additionally, novel strategies to modulate and enhance the synaptic functionalities of 2D‐memristor‐based artificial synapses are summarized. Finally, as a foreseeing perspective, the potentials and challenges of these emerging materials for future neuromorphic electronics are also discussed.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Memristive Devices and Systems: Modeling, Properties and Applications

Chun Sing Lai,Zhekang Dong,Donglian Qi

DOI: https://doi.org/10.3390/electronics12030765

IF: 2.9

2023-01-01

Electronics

Abstract:The memristor is considered to be a promising candidate for next-generation computing systems due to its nonvolatility, high density, low power, nanoscale geometry, nonlinearity, binary/multiple memory capacity, and negative differential resistance [...]
Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Min-Kyu Song,Ji-Hoon Kang,Xinyuan Zhang,Wonjae Ji,Alon Ascoli,Ioannis Messaris,Ahmet Samil Demirkol,Bowei Dong,Samarth Aggarwal,Weier Wan,Seok-Man Hong,Suma George Cardwell,Irem Boybat,Jae-sun Seo,Jang-Sik Lee,Mario Lanza,Hanwool Yeon,Murat Onen,Ju Li,Bilge Yildiz,Jesús A. del Alamo,Seyoung Kim,Shinhyun Choi,Gianluca Milano,Carlo Ricciardi,Lambert Alff,Yang Chai,Zhongrui Wang,Harish Bhaskaran,Mark C. Hersam,Dmitri Strukov,H.-S. Philip Wong,Ilia Valov,Bin Gao,Huaqiang Wu,Ronald Tetzlaff,Abu Sebastian,Wei Lu,Leon Chua,J. Joshua Yang,Jeehwan Kim,Jesús A. del Alamo

DOI: https://doi.org/10.1021/acsnano.3c03505

IF: 17.1

2023-06-30

ACS Nano

Abstract:Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in 2008, memristive devices have garnered significant attention due to their biomimetic memory properties, which promise to significantly improve power consumption in computing applications. Here, we provide a comprehensive overview of recent advances in...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Two-dimensional materials based volatile memristors mediated by flexoelectric effect

Menghan Deng,Zhaotan Gao,Lin Wang,Zhangchen Hou,Xionghu Xu,Li Chen,Anyang Cui,Kai Jiang,Liyan Shang,Liangqing Zhu,Yawei Li,Jinzhong Zhang,Zhigao Hu

DOI: https://doi.org/10.1016/j.nantod.2024.102332

IF: 17.4

2024-06-09

Nano Today

Abstract:The study of conventional lateral memristors has been in a slow stage of development due to the dependence of the atomic defect migration or local phase transition in two-dimensional (2D) materials. Here, a novel transversal memristor based on the flexoelectric effect induced by a bent atomic laminated structure is proposed. The memristor exhibits desirable resistive switching performance, including a current ON/OFF ratio of approximately 10 5 , forming-free operation, high yield of 97 %, and low cycle-to-cycle variation of only 7.4 %. The stable analog memristive behavior could be attributed to the dynamic modulation of the barrier between suspended and flat regions by external voltage biases. Further, the volatile resistance switching characteristics have successfully emulated key features of multi-field perceptual artificial nociceptors, including threshold, "no adaptation" etc. This work demonstrates a new resistive switching phenomenon in transversal 2D material devices, and opens a new way for the development of intelligent adaptive artificial sensory systems.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
An Ultrathin Memristor Based on a Two-Dimensional WS2/MoS2 Heterojunction

Wenguang Zhang,Hui Gao,Chunsan Deng,Ting Lv,Sanlue Hu,Hao Wu,Songyan Xue,Yufeng Tao,Leimin Deng,Wei Xiong

DOI: https://doi.org/10.1039/d1nr01683k

IF: 6.7

2021-01-01

Nanoscale

Abstract:Memristors are regarded as one of the key devices to break through the traditional Von Neumann computer architecture due to their capability of simulating the function of neural synapses. Among various memristive materials, two-dimensional (2D) materials are promising candidates to build advanced memristors with extremely high integration density and low power consumption. However, memristors based on 2D materials usually suffer from poor endurance and retention due to their vulnerability to material degradation during the formation/fusing processes of conductive filament channels within the switching media of 2D materials. Here, a new memristor architecture based on a WS2/MoS2 2D semiconducting heterojunction (metal/heterojunction/metal, MHM) is proposed, which is completely different from the conventional metal/insulator/metal (MIM) sandwich structure. Through the introduction of a type-II 2D heterojunction, a resistance switching mechanism based on band modulation rather than the conductive filaments can be realized to eliminate the material degradation during the set/reset processes. A prototype MHM memristor based on the WS2/MoS2 heterojunction is successfully developed with a large switching on/off ratio up to 104 and a clearly extended endurance over 120 switching cycles, showing the advantage of the 2D WS2/MoS2 heterojunction over the individual MoS2 or WS2 layers in memristive performance. The proposed method for the MHM-type 2D memristor has the potential to achieve a large-scale integrated memristor matrix with low power consumption and high integration density, which is promising for future artificial intelligence and brain-like computing systems.
Recent Advances in Resistive Switching Materials and Devices: from Memories to Memristors

Gang Liu,Yu Chen,Shuang Gao,Bin Zhang,Run-Wei Li,Xiaodong Zhuang

DOI: https://doi.org/10.30919/es8d779

2018-01-01

Engineered Science

Abstract:Resistive switching devices have not only been considered as an emerging candidate for the next generation information storage technology, but also demonstrated great potential for in-memory computing systems with greatly enhanced computation capability.This review focuses on the recent advances in resistive materials and devices.We first describe the electric field-induced filamentary conduction model that accounts for the resistive switching behavior observed in inorganic materials, as well as the novel electric field-engineering strategy that is used to optimize the device structure and the memory performance.The alternative ways of using organic and hybrid materials to construct resistive switching devices are then illustrated.By tuning the charge transfer interaction and solid state electrochemical redox properties in small molecules, polymer, metal-organic framework and organic-inorganic hybrid perovskite materials, bistable and multibit memories, as well as the biomimicking memristors have been fabricated.Finally, we discuss the future development of the resistive switching materials and devices, aiming to clarifying the key issues that hinders its practical applications.
A review of memristor: material and structure design, device performance, applications and prospects

Yongyue Xiao,Bei Jiang,Xin Chen,Shanwu Ke,Yaoyao Jin,Xin Wen,Cong Ye

DOI: https://doi.org/10.1080/14686996.2022.2162323

IF: 7.821

2023-03-01

Science and Technology of Advanced Materials

Abstract:With the booming growth of artificial intelligence (AI), the traditional von Neumann computing architecture based on complementary metal oxide semiconductor devices are facing memory wall and power wall. Memristor based in-memory computing can potentially overcome the current bottleneck of computer and achieve hardware breakthrough. In this review, the recent progress of memory devices in material and structure design, device performance and applications are summarized. Various resistive switching materials, including electrodes, binary oxides, perovskites, organics, and two-dimensional materials, are presented and their role in the memristor are discussed. Subsequently, the construction of shaped electrodes, the design of functional layer and other factors influencing the device performance are analyzed. We focus on the modulation of the resistances and the effective methods to enhance the performance. Furthermore, synaptic plasticity, optical-electrical properties, the fashionable applications in logic operation and analog calculation are introduced. Finally, some critical issues such as the resistive switching mechanism, multi-sensory fusion, system-level optimization are discussed. GRAPHICAL

materials science, multidisciplinary
Recent Advances of Quantum Conductance in Memristors

Wuhong Xue,Shuang Gao,Jie Shang,Xiaohui Yi,Gang Liu,Run-Wei Li

DOI: https://doi.org/10.1002/aelm.201800854

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:Memristors with the filamentary switching mechanism have been acknowledged as a leading candidate for next-generation nonvolatile memory applications, primarily due to their excellent downscaling potential, fast operation speed, low power consumption, and high switching endurance. In particular, room-temperature quantum conductance effect can emerge as the size of the conducting filaments is reduced down to atomic scale, offering great opportunities for the physical understanding of memristive switching phenomena and the realization of ultrahigh-density storage, logic-in-memory circuits, atomic scale photodetectors, and etc. This review presents a timely and comprehensive summary of the recent advances in quantum conductance in memristors. After a brief description on the evolution dynamics of conducting filaments, the experimental phenomena, theoretical understanding, effective control, and promising applications of quantum conductance in memristors are summarized and discussed in detail. Finally, current challenges and future prospects concerning quantum conductance in memristors are presented.
Recent Advances of Carbon Dot-Based Memristors: Mechanisms, Devices, and Applications

Yanli Cao,Haotian Hao,Lin Chen,Yongzhen Yang

DOI: https://doi.org/10.1016/j.apmt.2023.102032

IF: 8.663

2023-01-01

Applied Materials Today

Abstract:Memristors are considered to hold promising applications in the fields of resistive random-access memory and synaptic bionic devices owing to their unique nonlinear electrical characteristics. Stability of performances is critical for memristors, in which functional layer materials are key. As novel functional layer materials, carbon dots (CDs) are zero-dimensional nanomaterials with a size of less than 10 nm. Owing to their distinctive features such as excellent thermal stability, high electrical conductivity, favorable dispersion and quantum effect, they can be used as functional layer materials for memristors either individually or in combination with other resistive materials to achieve satisfactory memristor regulation. This review summarizes the recent advances of CD-based memristors, including memristive mechanisms, devices, and applications. Firstly, the common memristive mechanisms of CD-based memristors are categorized as metal conductive filament mechanism, electron trapping and detrapping mechanism and oxygen vacancy conductive filament mechanism. Secondly, CDs-based mem-ristors are classified into digital and analog types, and the effect of CDs on improving the performance of different types of memristors is further investigated. Finally, the current application fields of CD-based mem-ristors at the present stage are reviewed, and the prospects for their development are prospected. This work is instructive for understanding the research progress of CD-based memristors and exploring the role of CDs in memristors, which brings the possibility of obtaining high-performance memristors for achieving better neuro-morphic computing and data storage.
Solid-State Electrochemical Process and Performance Optimization of Memristive Materials and Devices

Wuhong Xue,Xiao-Hong Xu,Gang Liu

DOI: https://doi.org/10.3390/chemistry1010005

2019-01-01

Chemistry

Abstract:As an emerging technology, memristors are nanoionic-based electrochemical systems that retains their resistance state based on the history of the applied voltage/current. They can be used for on-chip memory and storage, biologically inspired computing, and in-memory computing. However, the underlying physicochemical processes of memristors still need deeper understanding for the optimization of the device properties to meet the practical application requirements. Herein, we review recent progress in understanding the memristive mechanisms and influential factors for the optimization of memristive switching performances. We first describe the working mechanisms of memristors, including the dynamic processes of active metal ions, native oxygen ions and other active ions in ECM cells, VCM devices and ion gel-based devices, and the switching mechanisms in organic devices, along with discussions on the influential factors of the device performances. The optimization of device properties by electrode/interface engineering, types/configurations of dielectric materials and bias scheme is then illustrated. Finally, we discuss the current challenges and the future development of the memristor.
2D Layered Materials for Memristive and Neuromorphic Applications

Chen-Yu Wang,Cong Wang,Fanhao Meng,Pengfei Wang,Shuang Wang,Shi-Jun Liang,Feng Miao

DOI: https://doi.org/10.1002/aelm.201901107

IF: 6.2

2020-01-01

Advanced Electronic Materials

Abstract:With many fantastic properties, memristive devices have been proposed as top candidate for next-generation memory and neuromorphic computing chips. Significant research progresses have been made in improving performance of individual memristive devices and in demonstrating functional applications based on small-scale memristive crossbar arrays. However, practical deployment of large-scale traditional metal oxides based memristive crossbar array has been challenging due to several issues, such as high-power consumption, poor device reliability, low integration density and so on. To solve these issues, new materials that possess superior properties are required. Two-dimensional (2D) layered materials exhibit many unique physical properties and show great promise in solving these challenges, further providing new opportunities to implement practical applications in neuromorphic computing. Here, recent research progress on 2D layered materials based memristive device applications is reviewed. We provide an overview of the progresses and challenges on how 2D layered materials are used to solve the issues of conventional memristive devices and to realize more complex functionalities in neuromorphic computing. Besides, we also provide an outlook on exploitation of unique properties of 2D layered materials and van der Waals heterostructures for developing new types of memristive devices and artificial neural mircrocircuits.

Current Status and Prospects of Memristors Based on Novel 2D Materials

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Two-Dimensional Materials Based Memtransistors: Integration Strategies, Switching Mechanisms and Advanced Characterizations

Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications

Novel 2D MXene-based materials in memristors: fundamentals, resistive switching properties and applications

Recent advances in memristors based on two-dimensional ferroelectric materials

Low-Power Memristor Based on Two-Dimensional Materials

Emerging of two-dimensional materials in novel memristor

Electronic and Photoelectronic Memristors Based on 2D Materials

A New Memristor with 2D Ti3 C2 Tx MXene Flakes As an Artificial Bio-Synapse.

Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

Memristive Devices and Systems: Modeling, Properties and Applications

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Two-dimensional materials based volatile memristors mediated by flexoelectric effect

An Ultrathin Memristor Based on a Two-Dimensional WS2/MoS2 Heterojunction

Recent Advances in Resistive Switching Materials and Devices: from Memories to Memristors

A review of memristor: material and structure design, device performance, applications and prospects

Recent Advances of Quantum Conductance in Memristors

Recent Advances of Carbon Dot-Based Memristors: Mechanisms, Devices, and Applications

Solid-State Electrochemical Process and Performance Optimization of Memristive Materials and Devices

2D Layered Materials for Memristive and Neuromorphic Applications