Complete Strain Mapping of Nanosheets of Transition Metal Chalcogenides

Yue Cao,Tadesse Assefa,Soham Banerjee,Simon J. L. Billinge,Jedrzej Wieteska,Dennis Wang,Abhay Pasupathy,Xiao Tong,Yu Liu,Wenjian Lu,Yuping Sun,Yan He,Xiaojing Huang,Hanfei Yan,Yong S. Chu,Ian K. Robinson

2019-01-01

Abstract:Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying crystal strain is a prerequisite to correlating it with the performance of the device, and calls for high resolution but spatially resolved rapid characterization methods. Here we show that using fly-scan nano X-ray diffraction we can accomplish a tensile strain sensitivity below 0.001% with a spatial resolution of better than 80 nm over a spatial extent of 100 nm on quasi 2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a ~100 nm thick sheet of 1T-TaS2 by scanning 12keV focused X-ray beam across and rotating the sample. We demonstrate that the strain distribution around micron and sub-micron sized 'bubbles' that are present in the sample may be reconstructed from these images. The experiments use state of the art synchrotron instrumentation, but are rapid and straightforward and present novel method for detailed strain mapping of thin samples.