Abstract:Constructing interface and defect systematic engineering strategies has been demonstrated to be an effective way to modulate electron transfer and nonlinear absorption properties in semiconductor heterojunction. However, the role of defect and interface strain in the interfacial electron transfer of MoX2 (X=Se, S, Te) @ZnO heterojunction remains poorly understood. Herein, by taking MoX2@ZnO as a heterojunction, we unravel that vacancies play a critical role in the interfacial electron transfer of heterojunction. The defects and interface engineering of MoX2@ZnO heterojunction for controlled charge transfer and electron excitation-relaxation is presented. Experimental characterization combined with first-principles calculations show that the defects effect promotes the transport of photogenerated carriers at the heterojunction interface, thereby inhibiting their rapid recombination. The DFT calculation confirmed that the electron band structure, state density and charge density distribution of the system changed after the formation of Mo-O bonds. On the basis of defects and interfacial stress as well as the effective charge transfer, the MoX2@ZnO heterojunction exhibit excellent excitation and emission behaviors. The nonlinear optical regulation behavior of TMDs is expected to be realized with the help of the defects and interfacial/surface synergistically modulated effect of ZnO nanoparticles. The local strain generation on the MoX2@ZnO heterojunction boundary provides a new method for the design of new heterogeneous materials, and will be of great significance to investigate the contact physical behavior and application between metals and two-dimensional (2D) semiconductors. This work provides some inspiration for constructing heterojunctions with rich defects and surface/interface charge transfer channels to promote tunable electron transfer dynamics, thereby achieving good nonlinear optical conversion efficiency and efficient charge separation in optoelectronic functional materials.

Work Function Dependent Photogenerated Carrier Dynamics of Defective Transition Metal Dichalcogenide Heterostructures

Defect Engineering of Out-of-Plane Charge Transport in Van Der Waals Heterostructures for Bi-Direction Photoresponse

Defect-regulated charge carrier dynamics in two-dimensional ZnO/MoS 2 heterostructure

Reduced absorption due to defect-localized interlayer excitons in transition metal dichalcogenide-graphene heterostructures

Defect-Type-Dependent Carrier Lifetimes in Monolayer WS2 Films

Role of chalcogen vacancies and hydrogen in the optical and electrical properties of bulk transition-metal dichalcogenides

New Theoretical Insights into the Photoinduced Carrier Transfer Dynamics in WS2/WSe2 Van Der Waals Heterostructures

Defects and interfacial/surface synergistically modulated electron transfer and nonlinear absorption properties in MoX2 (X=Se, S, Te) @ZnO heterojunction

Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation

Quantitatively Deciphering Electronic Properties of Defects at Atomically Thin Transition-Metal Dichalcogenides.

Defects As a Factor Limiting Carrier Mobility in WSe 2 : A Spectroscopic Investigation

Accelerated Carrier Recombination by Grain Boundary/Edge Defects in MBE Grown Transition Metal Dichalcogenides

Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides

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Atomic Healing of Defects in Transition Metal Dichalcogenides

Microscopic Pump-Probe Optical Technique to Characterize the Defect of Monolayer Transition Metal Dichalcogenides

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