Abstract:Because of the strong Coulomb interaction and quantum confinement effect, 2-dimensional transition metal dichalcogenides possess a stable excitonic population. To realize excitonic device applications, such as excitonic circuits, switches, and transistors, it is of paramount importance for understanding the optical properties of transition metal dichalcogenides. Furthermore, the strong quantum confinement in 2-dimensional space introduces exotic properties, such as enhanced phonon bottlenecking effect, many-body interaction of excitons, and ultrafast nonequilibrium exciton–exciton annihilation. Exciton diffusion is the primary energy dissipation process and a working horse in excitonic devices. In this work, we investigated time-resolved exciton propagation in monolayer semiconductors of WSe2, MoWSe2, and MoSe2, with a home-built femtosecond pump-probe microscope. We observed ultrafast exciton expansion behavior with an equivalent diffusivity of up to 502 cm2 s−1 at the initial delay time, followed by a slow linear diffusive regime (20.9 cm2 s−1) in the monolayer WSe2. The fast expansion behavior is attributed to energetic carrier-dominated superdiffusive behavior. We found that in the monolayers MoWSe2 and MoSe2, the energetic carrier-induced exciton expansion is much more effective, with diffusivity up to 668 and 2295 cm2 s−1, respectively. However, the “cold” exciton transport is trap limited in MoWSe2 and MoSe2, leading to negative diffusion behavior at later time. Our findings are helpful to better understand the ultrafast nonlinear diffusive behavior in strongly quantum-confined systems. It may be harnessed to break the limit of conventional slow diffusion of excitons for advancing more efficient and ultrafast optoelectronic devices.

Accelerated Carrier Recombination by Grain Boundary/Edge Defects in MBE Grown Transition Metal Dichalcogenides

Defect-Type-Dependent Carrier Lifetimes in Monolayer WS2 Films

Work Function Dependent Photogenerated Carrier Dynamics of Defective Transition Metal Dichalcogenide Heterostructures

Defect-Enhanced Exciton–Exciton Annihilation in Monolayer Transition Metal Dichalcogenides at High Exciton Densities

Quantitatively Deciphering Electronic Properties of Defects at Atomically Thin Transition-Metal Dichalcogenides.

Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy

Unveiling Defect-Mediated Carrier Dynamics in Monolayer Semiconductors by Spatiotemporal Microwave Imaging

Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide

Ultrafast Exciton Decomposition in Transition Metal Dichalcogenide Heterostructures

Determining Quasiparticle Bandgap of Two-Dimensional Transition Metal Dichalcogenides by Observation of Hot Carrier Relaxation Dynamics

Unveiling Defect-Mediated Carrier Dynamics in Few-Layer MoS2 Prepared by Ion Exchange Method Via Ultrafast Vis-NIR-MIR Spectroscopy

Remarkably high thermal-driven MoS<sub>2</sub>grain boundary migration mobility and its implications on defect healing

Defect Engineering of Out-of-Plane Charge Transport in Van Der Waals Heterostructures for Bi-Direction Photoresponse

Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides

Tailoring Exciton Dynamics of Monolayer Transition Metal Dichalcogenides by Interfacial Electron-Phonon Coupling

Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation

Remarkably high thermal-driven MoS2 grain boundary migration mobility and its implications on defect healing

Defect Engineering in CdSxSe1–x Nanobelts: an Insight into Carrier Relaxation Dynamics Via Optical Pump–Terahertz Probe Spectroscopy

Spin/valley coupled dynamics of electrons and holes at the ${\text{MoS}_{2}-\text{MoSe}_{2}}$ interface

Defects As a Factor Limiting Carrier Mobility in WSe 2 : A Spectroscopic Investigation

Asymmetric photoelectric effect: Auger-assisted hot hole photocurrents in transition metal dichalcogenides