Abstract:Two-dimensional (2D) multiferroic materials are recognized as promising candidates for next-generation nanodevices due to their tunable magnetoelectric coupling and distinctive physical phenomena. In this study, we proposed a novel 2D multiferroic van der Waals heterostructure (vdWH) by stacking atomic layers of ferroelectric In 2 Se 3 and ferromagnetic MnI 3 . Using first-principles calculations, we found that the MnI 3 /In 2 Se 3 vdWH exhibit robust metallic conductivity across various spin and polarization states, preserving the distinctive band characteristics of isolated In 2 Se 3 and MnI 3 . However, the alignment of Fermi levels causes the conduction band minimum (CBM) and valence band maximum (VBM) of In 2 Se 3 and MnI 3 to shift relative to their original band structures. Remarkably, the MnI 3 /In 2 Se 3 with the upward polarization state of In 2 Se 3 exhibits an Ohmic contact. Switching the polarization direction of In 2 Se 3 from upward to downward can transform the MnI 3 /In 2 Se 3 vdWH from an Ohmic contact to a p-type Schottky contact, while also modifying its dipole moment, magnetic strength and direction. Based on these properties of MnI 3 /In 2 Se 3 vdWH, we designed the field-effect transistors (FETs) with high on/off rates and nonvolatile data storage device. Furthermore, the Schottky barrier heights (SBHs), magnetic moment, and dipole moment of MnI 3 /In 2 Se 3 vdWH can also be effectively regulated by reducing the interlayer distance. With the continuous reduction of the interlayer distance of MnI 3 /In 2 Se 3 vdWH, its easy magnetization axis is expected to shift from in-plane to out-of-plane. These findings offer new insights for the design and development of the next-generation spintronic and nonvolatile memory nanodevices.

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Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

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Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Full Electrical Control of Multiple Resistance States in Van Der Waals Sliding Multiferroic Tunnel Junctions

Nonvolatile Multiferroic Coupling in Van Der Waals Heterostructure

Fully Electrically Controlled van der Waals Multiferroic Tunnel Junctions

Van Der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction.

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Ferroelectrically Controlled Topological Magnetic Phase in a Janus-magnet-based Multiferroic Heterostructure

Bi-ferroic memristive properties of multiferroic tunnel junctions

Nonreciprocal and Nonvolatile Electric-Field Switching of Magnetism in Van Der Waals Heterostructure Multiferroics

Improved Memory Functions In Multiferroic Tunnel Junctions With A Dielectric/Ferroelectric Composite Barrier

Tunable Schottky barriers and magnetoelectric coupling driven by ferroelectric polarization reversal of MnI 3 /In 2 Se 3 multiferroic heterostructures

Multilevel Control Of The Metastable States In A Manganite Film

Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions.