Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO<sub>2</sub>/Pt RRAM

Intrinsic Anionic Rearrangement by Extrinsic Control: Transition of RS and CRS in Thermally Elevated TiN/HfO2/Pt RRAM.

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Three-state resistive switching in HfO2-based RRAM

Three-state resistive switching in HfO 2 -based RRAM

Multi-mode Resistive Switching Behaviors Induced by Modifying Ti Interlayer Thickness and Operation Scheme

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Complementary Switching in 3D Resistive Memory Array

Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory

Co-existed Unipolar and Bipolar Resistive Switching Effect of HfOx-based RRAM

Effect of TiO<inf>x</inf> Film Thickness on Resistive Switching Behavior of TiN/TiO<inf>x</inf>/HfO<inf>2</inf>/Pt RRAM Device

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Impact of lattice plane orientation in TiO 2 based resistive switching memory: A computational approach

The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system

Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiO x (HAT) RRAM

A Unified Physical Model of Switching Behavior in Oxide-Based RRAM

Realization of Dendritic Characteristics Based on Metal Oxide Resistive Switching Memory

Conduction mechanism and impedance analysis of HfO x -based RRAM at different resistive states

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO 2 -based RRAM device with a vanadium electrode.